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United States Patent | 6,251,181 |
Deitch ,   et al. | June 26, 2001 |
A method for forming a solid solution alloy crystal includes forming a solid solution alloy crystal having at least the same diameter as a seed crystal. The seed crystal is exposed to a liquid containing a desired concentration of an alloying element to dissolve a portion of the seed crystal. The solid solution alloy crystal is then formed from the liquid. The method allows a large diameter solid solution alloy crystal to be grown in a reduced time or a larger diameter solid solution alloy crystal to be grown in a known fixed total process time.
Inventors: | Deitch; Richard H. (Worthington, OH); Digges, Jr.; Thomas G. (Fredericksburg, VA) |
Assignee: | Virginia Semiconductor (Fredericksburg, VA) |
Appl. No.: | 336305 |
Filed: | June 18, 1999 |
Current U.S. Class: | 117/13; 117/2; 117/3; 117/14 |
Intern'l Class: | C30B 015/20 |
Field of Search: | 117/2,3,13,14 |
5693203 | Dec., 1997 | Ohhashi et al. | |
5858086 | Jan., 1999 | Hunter | 117/84. |
5972109 | Oct., 1999 | Hunter | 117/204. |
Foreign Patent Documents | |||
08253830A | Oct., 1996 | JP. |
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