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United States Patent | 6,246,092 |
Fujihira ,   et al. | June 12, 2001 |
A MOS type semiconductor apparatus is provided that includes a first MOS type semiconductor device through which main current flows, and a second MOS type semiconductor device through which current that is smaller than the main current flows. The first and second MOS type semiconductor devices provided on the same semiconductor substrate have substantially the same structure, and have a common drain electrode. A gate electrode of the second MOS type semiconductor device is connected to the common drain electrode. The semiconductor apparatus further includes a plurality of pairs of Zener diodes which are connected in series and provided between the source electrode of the second MOS type semiconductor device and the gate electrode of the first MOS type semiconductor device. Each pair of Zener diodes are reversely connected to each other.
Inventors: | Fujihira; Tatsuhiko (Nagano, JP); Nishimura; Takeyoshi (Nagano, JP); Kobayashi; Takashi (Nagano, JP) |
Assignee: | Fuji Electric Co., Ltd. (JP) |
Appl. No.: | 042544 |
Filed: | March 17, 1998 |
Mar 17, 1997[JP] | 9-063535 |
Current U.S. Class: | 257/341; 257/262; 257/263; 257/328; 257/329; 257/332; 257/334; 257/359; 257/577; 257/582; 257/E27.016 |
Intern'l Class: | H03K 017/28 |
Field of Search: | 257/328,329,262,263,332,334,359,577,582,341 |
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