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United States Patent | 6,240,115 |
Chen ,   et al. | May 29, 2001 |
A laser having a first layer of a III-V semiconducting material of a first semiconductor type on which a mask having an opening therein is deposited. A second layer of a III-V semiconducting material of the first semiconductor type is grown from the portion of the first layer underlying the opening in the mask and extends over the mask. A first cladding layer of a III-V semiconducting material of the first semiconductor type is grown over the second layer so as to cover the second layer. The active layer that generates light upon the recombination of holes and electrons therein is grown over the first cladding layer. A second cladding layer of a III-V semiconducting material is grown over the active layer, the second cladding layer including a III-V semiconducting material of the opposite semiconductor type from the first layer. A third layer of a III-V semiconducting material is grown over the second cladding layer. The third layer of a III-V semiconducting material includes a III-V semiconducting material of the opposite semiconductor type, and the third layer of a III-V semiconducting material includes a crystalline layer covering the cladding layer. Two facets of the crystalline layer form the mirrors at opposite ends of an optical cavity that includes the active layer. The preferred III-V semiconducting material is GaN.
Inventors: | Chen; Yong (Mountain View, CA); Wang; Shih-Yuan (Palo Alto, CA) |
Assignee: | Agilent Technologies, Inc. (Palo Alto, CA) |
Appl. No.: | 140976 |
Filed: | August 27, 1998 |
Current U.S. Class: | 372/45.01; 372/46.01 |
Intern'l Class: | H01S 005/00 |
Field of Search: | 372/45,46,49 257/94 |
5880485 | Mar., 1999 | Marx et al. | 257/94. |
Foreign Patent Documents | |||
0 551 721 | Jul., 1993 | EP | . |
0 874 405 | Oct., 1998 | EP | . |
Ando, Seigo et al., "Novel Hexagonal-Facet GaAs/AIGaAs Laser Grown by Selective Area Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 32, Sep. 15, 1993, No. 9b, Part 2, Tokyo, Japan, pp. 1293-1296. Ando, Seigo et al., "Selective Area Metalorganic Chemical Vapor Deposition Growth for Hexagonal-Facet Lasers", Journal of Crystal Growth, vol. 145, Dec. 11, 1994, Nos. 1/4, Amsterdam, NL, pp. 302-307. Kato, Yoshiki et al., "Selective Growth of Wurtzite GaN and AIxGa1-xN on GaN/Sapphire Substrates by Metalorganic Vapor Phase Epitaxy", Journal of Crystal Growth, Dec. 11, 1994, Nos. 3/4, Amsterdam, NL, pp. 133-140. |