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United States Patent | 6,228,709 |
Hsieh | May 8, 2001 |
A method of fabricating an HSG electrode. An electrode is defined before the formation of an HSG layer. The HSG layer is then formed on the top surface and the side wall of the electrode. The HSG layer is thermal oxidized in a furnace by rapid thermal process, and a silicon oxide layer is formed on the surface of the HSG layer. Dipping the electrode into a dilute solution of hydrogen fluoride or buffered oxide etching (BOE), the silicon oxide layer is lifted off while an HSG structure is remained on the top surface and the side wall of the electrode.
Inventors: | Hsieh; Wen-Yi (Hsinchu, TW) |
Assignee: | United Microelectronics Corp. (TW) |
Appl. No.: | 010684 |
Filed: | January 22, 1998 |
Nov 27, 1997[TW] | 86117835 |
Current U.S. Class: | 438/255; 257/E21.013; 438/398 |
Intern'l Class: | H01L 021/824.2 |
Field of Search: | 438/239,253,255,396,398,254,397 |
5405801 | Apr., 1995 | Han et al. | 438/398. |
5464791 | Nov., 1995 | Hirota | 438/253. |
5622889 | Apr., 1997 | Yoo et al. | 438/398. |
5679596 | Oct., 1997 | Lu | 438/398. |
5696014 | Dec., 1997 | Figura | 438/396. |
5721153 | Feb., 1998 | Kim et al. | 438/398. |
5723373 | Mar., 1998 | Chang et al. | 438/253. |
5726085 | Mar., 1998 | Crenshaw et al. | 438/255. |
5753559 | May., 1998 | Yew et al. | 438/398. |
5759262 | Jun., 1998 | Weimer et al. | 438/398. |
5821152 | Oct., 1998 | Han et al. | 438/398. |
5837581 | Nov., 1998 | Cheng | 438/255. |
5846870 | Dec., 1998 | Ishida et al. | 438/255. |
5866455 | Feb., 1999 | Wu | 438/255. |
5874336 | Feb., 1999 | Cherng | 438/255. |