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United States Patent | 6,228,702 |
Hirota | May 8, 2001 |
In a semiconductor device fabricated according to a method of the present invention, a microelectronic capacitor is provided with a double-layered tantalum oxide film serving as a capacitance insulation film. The double-layered tantalum oxide film is constructed of: a first tantalum oxide film formed at a temperature of about 510.degree. C. under a high pressure of about 3.0 Torr in an atmosphere containing oxygen in a first film forming step; and, a second tantalum oxide film formed on the first tantalum oxide film at a temperature of about 510.degree. C. under a low pressure of about 0.3 Torr in an atmosphere free from oxygen in a second film forming step.
Inventors: | Hirota; Toshiyuki (Tokyo, JP) |
Assignee: | NEC Corporation (JP) |
Appl. No.: | 450460 |
Filed: | November 29, 1999 |
Nov 30, 1998[JP] | 10-340684 |
Current U.S. Class: | 438/240; 257/E21.274; 257/E21.648; 438/287; 438/369; 438/430; 438/780; 438/785 |
Intern'l Class: | H01L 021/824.2 |
Field of Search: | 438/240,369,287,391,388,430,435,437,780,781,785 |
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5688724 | Nov., 1997 | Yoon et al. | 437/235. |
5763300 | Jun., 1998 | Park et al. | 438/240. |
5786248 | Jul., 1998 | Schuegraf | 438/240. |
5837593 | Nov., 1998 | Park et al. | 438/396. |
6037235 | Mar., 2000 | Narwankar et al. | 438/396. |
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Shinriki H., and Nakata M. "UV-03 and Dry-02: Two-Step Annealed Chemical Vapor-Deposited Ta205 Films for Storage Dielectrics of 64-Mb DRAM's" IEEE, vol. 38, No. 3, pp. 455-462, Mar. 1991. |