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United States Patent | 6,228,689 |
Liu | May 8, 2001 |
A trench style bump and the application of the same. A trench style bump is formed on a silicon chip. The silicon chip is laminated on a substrate which has a circuit built inside and an anisotropic conductive film/anisotropic conductive paste formed thereon. During lamination, an ultra sonic wave is used to vibrate the substrate laterally, so that the conductive particles contained within the anisotropic conductive film/anisotropic conductive past are effectively trapped by the trench on the trench style bump.
Inventors: | Liu; Hermen (Taoyuan Hsien, TW) |
Assignee: | United Microelectronics Corp. (Hsinchu, TW) |
Appl. No.: | 085206 |
Filed: | May 27, 1998 |
Apr 18, 1998[TW] | 87105972 |
Current U.S. Class: | 438/131; 257/E21.508; 257/E23.021; 438/132; 438/251 |
Intern'l Class: | H01L 021/44 |
Field of Search: | 427/123,305,328,433,438 148/23,24,25,26 438/106,131,132,251,109 228/201,202,203 357/68,65,75,55 |
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