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United States Patent | 6,218,692 |
Guidash ,   et al. | April 17, 2001 |
An active pixel sensor architecture comprising a semiconductor substrate having a plurality of pixels formed, thereon, incorporating microlens and lightshields into the pixel architecture. Each of the pixels further comprising: a photodetector region upon which incident light will form photoelectrons to be collected as a signal charge; a device for transferring the signal charge from the photodetector region to a charge storage region that is covered by a light shield; a sense node that is an input to an amplifier; the sense node being operatively connected to the signal storage region. The pixel architecture facilitates symmetrical design of pixels which allows for incorporation of light shield and microlens technology into the design.
Inventors: | Guidash; Robert M. (Rochester, NY); Lee; Paul P. (Pittsford, NY); Lee; Teh-Hsuang (Carlsbad, CA) |
Assignee: | Eastman Kodak Company (Rochester, NY) |
Appl. No.: | 448375 |
Filed: | November 23, 1999 |
Current U.S. Class: | 257/292; 257/234; 257/294; 257/432; 257/435; 257/440; 257/E27.132; 257/E27.134 |
Intern'l Class: | H01L 031/062; H01L 031/113; H01L 027/148; H01L 029/768 |
Field of Search: | 257/291,292,432,435,223,230,234,294,440 |
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