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United States Patent | 6,218,690 |
Kim ,   et al. | April 17, 2001 |
A reverse self-aligned field effect transistor and a method of fabricating the same are provided. The reverse self-aligned transistor includes a source formed on an active region of a semiconductor substrate and a drain formed on the active region of the semiconductor substrate, the drain being positioned a predetermined distance from the source. A silicide film is formed on the source and the drain. Insulative film spacers are formed on sidewalls of a trench, the trench being formed by etchin the semiconductor substrate between the source and the drain. A gate insulative film is formed on a lower portion of the trench and a metal gate is formed on the gate insulative film between the insulative film spacers. The metal gate is electrically isolated from the source and the drain by the insulative film spacers.
Inventors: | Kim; Hyoung-sub (Seoul, KR); Ku; Ja-hum (Seongnam, KR); Kim; Chul-sung (Anyang, KR); Park; Jung-woo (Seoul, KR) |
Assignee: | Samsung Electronics Co., Ltd. (Suwon, KR) |
Appl. No.: | 376041 |
Filed: | August 16, 1999 |
Aug 14, 1998[KR] | 98-33068 |
Current U.S. Class: | 257/288; 257/382; 257/383; 257/384; 257/388; 257/413; 257/E21.429; 257/E21.432 |
Intern'l Class: | H01L 029/76 |
Field of Search: | 257/382,383,384,388,413,288 |
5633522 | May., 1997 | Dorleans et al. | 257/344. |
5659194 | Aug., 1997 | Iwamatsu et al. | 29/76. |
5723893 | Mar., 1998 | Yu et al. | 257/413. |
5739573 | Apr., 1998 | Kawaguchi | 257/384. |
5914518 | Jun., 1999 | Nguyen et al. | 257/377. |
5982001 | Nov., 1999 | Wu | 257/344. |
6025241 | Feb., 2000 | Lin et al. | 438/303. |
6066894 | May., 2000 | Yokozeki | 257/754. |
Foreign Patent Documents | |||
404162563 | Jun., 1992 | JP | 257/382. |
403080542 | Jun., 1992 | JP | 257/384. |
405136398 | Jun., 1993 | JP | 257/382. |