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United States Patent | 6,191,441 |
Aoki ,   et al. | February 20, 2001 |
A ferroelectric memory capable of writing data at a small operation voltage has an insulated-gate field effect transistor, a ferroelectric film, and a pair of capacitor electrodes formed on the ferroelectric film and facing each other, one of the pair of capacitor electrodes being electrically connected to the insulated gate. A ferroelectric memory device with a simple structure has an insulated-gate field effect transistor including a source, a drain, and an insulated gate, and a ferroelectric capacitor connected between the drain and the insulated gate.
Inventors: | Aoki; Masaki (Kawasaki, JP); Tamura; Hirotaka (Kawasaki, JP); Takauchi; Hideki (Kawasaki, JP); Eshita; Takashi (Kawasaki, JP) |
Assignee: | Fujitsu Limited (Kawasaki, JP) |
Appl. No.: | 178426 |
Filed: | October 26, 1998 |
Oct 28, 1997[JP] | 9-295878 | |
Oct 28, 1997[JP] | 9-295879 |
Current U.S. Class: | 257/295; 257/296; 257/310; 257/532; 257/E21.208; 257/E27.104; 365/145 |
Intern'l Class: | H01L 029/76 |
Field of Search: | 257/295,296,310,532 365/145 |
5155573 | Oct., 1992 | Abe et al. | 257/532. |
5721700 | Feb., 1998 | Katoh | 257/295. |
5798775 | Aug., 1998 | Takahashi et al. | 347/33. |
5856688 | Jan., 1999 | Lee et al. | 257/295. |
5907762 | May., 1999 | Evans et al. | 438/3. |
Foreign Patent Documents | |||
6-104447 | Apr., 1994 | JP. | |
6-119773 | Apr., 1994 | JP. |
Patent Abstracts of Japan; vol. 1996, No. 03, 29 mars 1996 (Mar. 29, 1996) & jp 07 297302 a (oki electric ind co ltd) 10 novembre 1995 (Nov. 11, 1995) *abrege*. Patent Abstracts of Japan; vol. 017, No. 504 (E-1430), 10 septembre 1993 (Sep. 10, 1993) & JP 05 129625 A (Rohm Co Ltd), 25 mai 1993 (May 25, 1993) *abrege*. Patent Abstracts of Japan; vol. 1995, No. 07, 31 aout 1995 (Aug. 31, 1995) & JP 07 106528 A (Nippondenso Co Ltd), 21 avril 1995 (Apr. 21, 1995) *abrege*. Patent Abstracts of Japan; vo. 1997, No. 05, 30 mai 1997 (May 30, 1997) & JP 09 027191 A (Rohm Co Ltd), 28 Janiver 1997 (Jan. 28, 1997) *abrege*. |