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United States Patent |
6,177,295
|
De Samber
,   et al.
|
January 23, 2001
|
Method of manufacturing semiconductor devices with "chip size package"
Abstract
A method of manufacturing enveloped semiconductor devices, in which use is
made of a slice of a semiconductor material which is provided on its first
side with an intermediate layer of an insulating material on which a top
layer of a semiconductor material is formed, semiconductor elements are
formed in the top layer, paths of the slice's surface situated on this
side being left clear between the semiconductor elements, and the top
layer is removed from the insulating intermediate layer at the location of
the free paths. A metallization with connection electrodes extending as
far as the free paths are formed on the first side of the slice, the slice
is glued with its first side onto a transparent insulating supporting
body, semiconductor material is removed from the second side of the slice
facing away from the first side, and the slice thus reduced in thickness
is provided on its second side with a layer of an insulating material.
Grooves are formed in the supporting body, at the location of the free
paths, which grooves intersect the connection electrodes of the
metallization and extend into the layer of insulating material provided on
the second side of the slice, conductor tracks are formed on the
supporting body, which extend in the grooves so as to make contact with
the connection electrodes intersected in the grooves, and the slice is
divided, along the grooves, into separate semiconductor devices enveloped
by the supporting body and the insulating layer provided on the second
side.
Inventors:
|
De Samber; Mark A. (Eindhoven, NL);
Maas; Henricus G. R. (Eindhoven, NL)
|
Assignee:
|
U.S. Philips Corporation (New York, NY)
|
Appl. No.:
|
268259 |
Filed:
|
March 15, 1999 |
Foreign Application Priority Data
Current U.S. Class: |
438/106; 257/E21.508; 257/E23.02; 438/458 |
Intern'l Class: |
H01L 021/44 |
Field of Search: |
438/51,55,64,106,110,113,114,458-465
257/678,684,700
|
References Cited
U.S. Patent Documents
5677562 | Oct., 1997 | Korwin-Pawlowski et al. | 438/762.
|
Foreign Patent Documents |
9519645 | Jul., 1995 | WO.
| |
Primary Examiner: Nelms; David
Assistant Examiner: Le; Dung A
Attorney, Agent or Firm: Biren; Steven R.
Claims
What is claimed is:
1. A method of manufacturing enveloped semiconductor devices, comprising:
forming semiconductor elements on a first side of a slice of a
semiconductor material, paths of the slice's surface situated on this side
being left clear between the semiconductor elements,
forming a metallization with connection electrodes extending as far as the
free paths on the first side of the slice,
gluing the slice with its first side onto a transparent insulating
supporting body,
removing semiconductor material from the second side of the slice facing
away from the first side,
providing the slice thus reduced in thickness on its second side with a
layer of an insulating material,
forming grooves in the supporting body, at the location of the free paths,
which grooves intersect the connection electrodes of the metallization and
extend into the layer of insulating material provided on the second side
of the slice,
forming conductor tracks on the supporting body, which extend in the
grooves so as to make contact with the connection electrodes intersected
in the grooves, and
dividing the slice, along the grooves, into separate semiconductor devices
enveloped by the supporting body and the insulating layer provided on the
second side, said method further comprising:
using a slice of a semiconductor material which is provided on its first
side with an intermediate layer of an insulating material on which a top
layer of a semiconductor material is formed,
forming the semiconductor elements in this top layer,
prior to the formation of the metallization on the first side of the slice,
removing the top layer from the insulating intermediate layer at the
location of the free paths, and
by removing semiconductor material from the second side, exposing the layer
of an insulating material situated below the top layer.
2. A method as claimed in claim 1, comprising, after removing, from the
second side, the semiconductor material from the slice, securing said
slice onto a sawing foil, and after forming the grooves in the supporting
body, removing the semiconductor devices from the sawing foil.
3. A method as claimed in claim 2, comprising depositing a layer of silicon
nitride on the exposed intermediate layer before the slice is secured to
the sawing foil.
4. A method as claimed in claim 1, comprising depositing a layer of a
synthetic resin on the exposed intermediate layer.
5. A method as claimed in claim 4, comprising depositing a layer of epoxy
on the exposed intermediate layer.
Description
BACKGROUND OF THE INVENTION
The invention relates to a method of manufacturing enveloped semiconductor
devices, in which:
semiconductor elements are formed on a first side of a slice of a
semiconductor material, paths of the slice's surface situated on this side
being left clear between the semiconductor elements,
a metallization with connection electrodes extending as far as the free
paths are formed on the first side of the slice,
the slice is glued with its first side onto a transparent insulating
supporting body,
semiconductor material is removed from the second side of the slice facing
away from the first side,
the slice thus reduced in thickness is provided on its second side with a
layer of an insulating material,
grooves are formed in the supporting body, at the location of the free
paths, which grooves intersect the connection electrodes of the
metallization and extend into the layer of insulating material provided on
the second side of the slice, --conductor tracks are formed on the
supporting body, which extend in the grooves so as to make contact with
the connection electrodes intersected in the grooves, and
the slice is divided, along the grooves, into separate semiconductor
devices enveloped by the supporting body and the insulating layer provided
on the second side.
The enveloped semiconductor device may be extremely thin. After removal of
semiconductor material from the second side of the slice, which has a
customary thickness of, for example, approximately 600 .mu.m, only a part
hereof remains which has a thickness, for example, below 100 .mu.m. The
supporting body may also be very thin, i.e. it has a thickness of, for
example, 100 .mu.m. Also the layer of insulating material which is
provided on the second side may be very thin. The conductor tracks formed
on the supporting body may be provided with solder surfaces which enable
the semiconductor devices to be mounted in a simple manner on a substrate
containing wiring. Also these solder surfaces may be embodied so as to be
very thin. An overall thickness of the enveloped semiconductor of
approximately 300 .mu.m is feasible. The dimensions of the enveloped
semiconductor devices in the lateral direction are hardly larger than the
lateral dimensions of the semiconductor elements formed in semiconductor
material, which are also referred to as chips. The above-described
envelope, also referred to as "Chip Size Package" may comprise, for
example, integrated circuits with a memory. By virtue of their small
thickness and lateral dimensions, semiconductor devices including such
integrated circuits can suitably be used, for example, in credit cards and
telephone cards.
In WO 95/19645, a description is given of a method of the type mentioned in
the opening paragraph, in which use is made of a customary slice of
semiconductor material. After the semiconductor elements and the
metallization with connection electrodes are formed on the first side of
the slice of semiconductor material and the slice is glued with its first
side onto the supporting body, material is removed from the second side
until the thickness of the slice is approximately 100 .mu.m. Said slice is
provided with grooves, which are also formed from the second side of the
slice, within which the semiconductor material is entirely removed. These
grooves are formed at the location of the free paths on the surface of the
first side of the slice. Subsequently, a glass plate is glued onto the
second side. In this process, the grooves in the second side are filled
with the insulating material of the adhesive.
The grooves formed in the second side of the slice of semiconductor
material must be aligned relative to the free paths on the surface of the
first side of the slice. This cannot be readily achieved.
The grooves which are subsequently formed, in the supporting body, from the
first side must be formed so as to intersect the connection electrodes
without intersecting the semiconductor material of the slice which has
been made thinner. In this case, the conductor tracks formed in the
grooves will not be short-circuited by semiconductor material which, in
practice, is doped and hence will exhibit a certain conductivity.
Consequently, the grooves which are formed in the supporting body, from
the first side, must be accurately aligned relative to the grooves already
formed in the second side of the slice. This aligning operation too cannot
be readily performed.
It is an object of the invention to provide a method in which the above
aligning problems are reduced.
To achieve this, the method in accordance with the invention is
characterized in that
use is made of a slice of a semiconductor material which is provided on its
first side with an intermediate layer of an insulating material on which a
top layer of a semiconductor material is formed,
the semiconductor elements are formed in this top layer,
prior to the formation of the metallization on the first side of the slice,
the top layer is removed from the insulating layer at the location of the
free paths, and
by removing semiconductor material from the second side, the layer of an
insulating material situated below the top layer is exposed.
The invention is based on the realization that if use is made of a slice of
a semiconductor material which is provided on its first side with an
intermediate layer of an insulating material on which a top layer of a
semiconductor material is formed, also referred to as Silicon-On-Insulator
or SOI slice, the necessary alignment of a number of process steps
relative to each other can be carried out from this first side of the
slice.
The semiconductor elements are formed on the first side, the metallization
with the contact electrodes is formed on the first side, and the grooves
in the supporting body, which is transparent, are formed in the first
side. The semiconductor material is removed in two steps from the free
paths on the surface of the slice. In the first step, alignment is
required, while this is not necessary in the second step. In the first
step, the top layer is removed from the free paths on the surface of the
first side. In the second step, which is carried out from the second side,
the semiconductor material situated on the intermediate layer of an
insulating material located below the top layer is entirely removed. This
takes place throughout the surface of the slice, so that this process does
not require aligning.
The layer of an insulating material on the second side of the slice can be
applied by providing the second side, after the removal of the
semiconductor material from the intermediate layer of an insulating
material situated below the top layer, with a glass plate which is glued
onto the exposed intermediate layer. Since the intermediate layer of
insulating material is exposed after the removal of semiconductor
material, the second side exhibits a flat surface. In addition, the second
side of the slice is already passivated by the insulating intermediate
layer. This is the reason why this second side of the slice is preferably
provided with a layer of an insulating material in a different manner.
In a first embodiment, the slice is provided with its second side onto a
sawing foil which is customarily used in the semiconductor technique. The
grooves formed in the supporting body extend into this sawing foil. By
virtue thereof, the division into separate semiconductor devices can be
readily achieved by removing them from the sawing foil. Prior to the
provision of the sawing foil, the second side may be provided, for
example, with a layer of silicon nitride by means of a customary plasma
deposition process.
In a second embodiment, a customary epoxy layer is deposited on the second
side. On this layer, for example, the type number of the semiconductor
device can be printed in a customary manner.
These and other aspects of the invention are apparent from and will be
elucidated with reference to the embodiments described hereinafter.
BRIEF DESCRIPTION OF THE DRAWING
In the drawings:
FIGS. 1 through 13 diagrammatically show several stages in the manufacture
of a semiconductor device, using a first embodiment of the method in
accordance with the invention.
DESCRIPTION OF THE PREFERRED EMBODIMENTS
In the first embodiment of the method in accordance with the invention, use
is made of a slice of a semiconductor material 1, in this example a slice
of silicon 2 which is provided on its first side 3 with an intermediate
layer 4 of an insulating material, here a layer of silicon oxide having a
thickness of approximately 0.4 .mu.m, on which a top layer 5, 6 of a
semiconductor material is formed. In the example, the top layer 5, 6
comprises a layer of silicon 5 which is relatively heavily doped with
approximately 10.sup.20 phosphor atoms per cc, said silicon layer having a
thickness of approximately 0.1 .mu.m, and an approximately 3 .mu.m thick
silicon layer 6 which is relatively lightly doped with approximately
10.sup.16 phosphor atoms per cc. The slice 1 comprising the silicon oxide
intermediate layer 4 and the doped silicon layers 5 and 6 is for example
obtained in a slice of silicon by forming the silicon oxide intermediate
layer 4 by implantation of oxygen ions, doping the approximately 0.1 .mu.m
thick layer 5 situated above the silicon oxide intermediate layer 4 with
phosphor in the above-mentioned concentration, and finally epitaxially
growing the lightly doped layer 6 on the layer 5.
Semiconductor elements 7 are formed on the first side 3 of the slice 1,
which is shown in plan view in FIG. 1. Between the semiconductor elements
7, paths 8 of the slice's surface 9 situated on the first side 3 are left
clear. At the location of these free paths 8, also referred to as scribe
paths, the finished semiconductor elements are separated from each other
by sawing or breaking.
As shown in the sectional view of FIG. 4, and in the plan view of FIG. 3,
an insulated island 10 is formed in the top layer 5, 6, which is achieved
by removing a part of the layers 5 and 6 from the insulating intermediate
layer 4. In the silicon island 10, the semiconductor element 7, in this
example a bipolar transistor, is subsequently formed in a customary manner
so as to have a base region 11 with a doping of approximately 5. 10.sup.17
boron atoms and an emitter region 12 with a doping of approximately
10.sup.20 arsenic atoms. Subsequently, the silicon island 10 is provided
with a layer of silicon oxide 13 in which windows 14 and 15 are formed to
contact, respectively, the base region 11 and the emitter region 12.
After the formation of the semiconductor element 7, a metallization 16 with
contact electrodes 17 is formed in a deposited aluminium layer. The
Figures are not drawn to scale; in practice, the conductor tracks 16, for
example, have a width of approximately 1 to 10 .mu.m, the contact
electrodes 17, for example, have a length and a width of approximately 100
.mu.m. The contact electrodes 17 extend as far as the free paths 8. In the
Figures, contact electrodes 17 of neighboring semiconductor elements are
shown in the free paths 8. Finally, an insulating layer 18 of silicon
oxide is provided.
In the example, a single bipolar transistor is shown as the semiconductor
element 7 for the sake of clarity. In practice, however, such a
semiconductor element may be an integrated circuit including a large
number of switching elements. They may be bipolar transistors but also,
for example, MOS transistors. Apart from these active switching elements,
also passive elements, such as coils, capacitors and light guides may be
incorporated. These passive elements may be provided on the silicon top
layer 5, 6, however, this top layer may alternatively be removed at the
location of the passive elements, so that these passive elements are
situated on the intermediate layer 4. The element 7 may alternatively
include a number of integrated circuits which are separated from each
other by a strip where the top layer 5, 6 is removed from the intermediate
layer 4. This enables, for example, a digital and an analog block to be
insulated from each other.
Subsequently, as shown in FIG. 5, an adhesive layer 19 is used to glue the
slice 1 with its first side 2 onto an insulating supporting body 20. The
adhesive is, for example, an epoxy or acrylate adhesive, and the
supporting body 20 is, in this case, a glass plate having a thickness of
100 .mu.m.
Subsequently, from the second side 21 facing away from the first side 3,
semiconductor material is removed from the slice 1. This treatment is
continued until the insulating intermediate layer 4 situated below the top
layer 5, 6 is exposed. To this end, the second side 21 of the slice 1 is
subjected to a chemico-mechanical polishing treatment until the distance
to the insulating intermediate layer 4 is reduced to several tens of
.mu.m, whereafter the intermediate layer 4 is exposed in an etch bath of
KOH. This etch treatment stops automatically when the insulating
intermediate layer 4 of silicon oxide has been reached.
The slice 1 reduced in thickness as described above is subsequently, as
shown in FIG. 7, provided on its second side 21 with a layer of an
insulating material 22, 23. In this example, an adhesive layer 22 is used,
in the same manner as described with respect to the first side 4, to glue
a glass plate 23 onto the exposed intermediate layer 4.
Subsequently, as shown in FIG. 8, grooves 24 are formed in the supporting
body 20 at the location of the free paths 7, which grooves intersect the
connection electrodes 17 of the metallization 16 and extend into the layer
of insulating material 22, 23 provided on the second side of the slice.
As shown in FIG. 9, after the formation of the grooves 24, a metal layer
25, in this example a multilayer consisting of a layer of Ti, a layer of
Pt and a top layer of Au, is provided on the supporting body 20 and in the
grooves 24. As shown in FIG. 10, conductor tracks 26 are formed in this
metal layer 25, which extend in the grooves 24 where they contact the
connection electrodes 17 intersected in the grooves.
Finally, the slice 1 is divided, for example by sawing right across the
free paths 8, into individual semiconductor devices enveloped by the
supporting body 20 and the insulating layer 22, 23 provided on the second
side 21.
The semiconductor device thus enveloped is very thin. The slice 1 provided
with the insulating layers 13, 18 and the metallization 16 has an overall
thickness of approximately 5 .mu.m. The adhesive layers 19 and 22 have a
thickness of approximately 20 .mu.m and the glass plates have a thickness
of approximately 100 .mu.m. As a result, the overall thickness of the
semiconductor device is less than 250 .mu.m. Also in the lateral
direction, the semiconductor device is hardly larger than the
semiconductor element 7. Furthermore, on the supporting body, the
conductor tracks 26 are connected to solder surfaces 27 enabling the
semiconductor device to be soldered onto a wiring provided on the surface
of a printed circuit board. In this manner, a "device" in a "Chip Size
Package" is obtained which can suitably be used for "surface mounting".
In the method, use is made of a slice of a semiconductor material 1 which
is provided on its first side 3 with an intermediate layer 4 of an
insulating material on which a top layer 5, 6 of a semiconductor material
is formed, also referred to as Silicon-On-Insulator or SOI slice. By
virtue thereof, the necessary alignment of a number of process steps
relative to each other can be carried out from this first side 3 of the
slice. As shown in FIG. 4, the semiconductor elements 7 are formed on the
first side 3, the metallization 16 with the contact electrodes 17 is
formed on the first side and the grooves 24 in the supporting body 20,
which is made of glass and hence is transparent, are formed in the first
side 3. The semiconductor material is removed from the free paths 8 on the
surface 9 of the slice 1 in two steps. In the first step, alignment is
required, while this is not necessary in the second step. In the first
step, as shown in FIG. 4, the top layer 5, 6 is removed from the free
paths 8 on the surface of the first side. This takes place from the first
side 3. In the second step shown in FIG. 6, which is carried out from the
second side 21, the semiconductor material is entirely removed from the
intermediate layer 4 of insulating material situated below the top layer
5, 6. This occurs throughout the surface of the slice, so that this
operation does not require aligning.
The layer of insulating material 22, 23 on the second side 21 of the slice
1 can be applied by providing the second side, after removing the
semiconductor material from the intermediate layer of insulating material
situated below the top layer, with a glass plate 23 which is glued onto
the exposed intermediate layer. Since the intermediate layer 4 of
insulating material is exposed after removal of the semiconductor
material, the second side 21 exhibits a flat surface. In addition, the
second side of the slice is already passivated by the insulating
intermediate layer 4. For this reason, a different method is preferably
used to provide this second side of the slice with a layer of an
insulating material.
In a first embodiment, the slice is provided with its second side, as shown
in FIG. 12, on a sawing foil 28 which is customarily used in the
semiconductor technique.
The grooves 24 formed in the supporting body extend into this sawing foil
28. This enables the division into separate semiconductor devices to be
carried out in a simple manner by removing them from the sawing foil. FIG.
13 shows this embodiment after the groove 24 is formed and the conductor
tracks 26 with solder surface 27 are provided. Prior to the provision of
the sawing foil, the second side may for example be provided with a layer
of silicon nitride, not shown, by means of a customary plasma deposition
process.
In a second embodiment, not shown, a customary layer of epoxy is deposited
on the second side. For example, the type number of the semiconductor
device can be printed in a customary manner on this epoxy layer.
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