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United States Patent |
6,175,524
|
Kwak
|
January 16, 2001
|
Merged memory and logic (MML) integrated circuit devices including buffer
memory and methods of detecting errors therein
Abstract
An MML integrated circuit device includes a memory block, a logic circuit
and a buffer memory, and a selection circuit that is coupled between the
logic circuit and the buffer memory. The first selection portion is
responsive to external data and to the logic circuit, to transmit external
data or data from the logic circuit to the memory block via the buffer
memory. Thus, MML integrated circuit devices can use the buffer memory to
access the memory block during a normal operational mode and during a test
mode. MML integrated circuit devices also preferably include a data
expansion portion that is coupled between the external data and the
selection portion, to replicate the external data a predetermined number
of times and to transmit the replicated external data to the selection
portion. Errors may be detected in an MML integrated circuit device that
includes a memory block, a logic circuit and a buffer memory, by storing
external data from external of the MML integrated circuit device into the
buffer memory, and storing the external data from the buffer memory into
the memory block. The external data is read from the memory block and the
read external data is stored from the memory block into the buffer memory.
The read external data is output from the buffer memory to external of the
MML integrated circuit device. The external data may be stored from
external of the MML integrated circuit device into the buffer memory by
applying external data from external of the MML integrated circuit device
to the MML integrated circuit device, replicating the external data a
predetermined number of times in the MML integrated circuit device and
storing the replicated external data in the buffer memory.
Inventors:
|
Kwak; Jin-seok (Kyungki-do, KR)
|
Assignee:
|
Samsung Electronics Co., Ltd. (KR)
|
Appl. No.:
|
351728 |
Filed:
|
July 12, 1999 |
Foreign Application Priority Data
Current U.S. Class: |
365/189.05; 365/201 |
Intern'l Class: |
G11C 007/00 |
Field of Search: |
365/201,189.05
714/7,711,710
|
References Cited
U.S. Patent Documents
5293386 | Mar., 1994 | Muhmenthaler et al. | 371/21.
|
5315553 | May., 1994 | Morris | 365/201.
|
5377144 | Dec., 1994 | Brown | 365/189.
|
5465257 | Nov., 1995 | Yamahata et al. | 371/22.
|
5483493 | Jan., 1996 | Shin | 365/201.
|
5535165 | Jul., 1996 | Davis et al. | 365/201.
|
5574692 | Nov., 1996 | Dierke | 365/201.
|
5642479 | Jun., 1997 | Flynn | 395/183.
|
5677877 | Oct., 1997 | Yoon et al. | 365/189.
|
5848016 | Dec., 1998 | Kwak | 365/201.
|
5926420 | Jul., 1999 | Kim | 365/189.
|
5982681 | Nov., 1999 | Schwarz | 365/201.
|
6003148 | Dec., 1999 | Yamauchi et al. | 365/201.
|
6031785 | Feb., 2000 | Park et al. | 365/189.
|
Foreign Patent Documents |
0 636 976 A1 | Feb., 1995 | EP.
| |
0 801 400 A1 | Oct., 1997 | EP.
| |
0 801 401 A1 | Oct., 1997 | EP.
| |
0 840 217 A1 | May., 1998 | EP.
| |
2 305 732 | Apr., 1997 | GB.
| |
WO 98/12707 | Mar., 1998 | WO.
| |
Primary Examiner: Dinh; Son T.
Attorney, Agent or Firm: Myers Bigel Sibley & Sajovec
Claims
What is claimed is:
1. A Merged Memory and Logic (MML) integrated circuit device comprising:
a memory block;
a logic block;
a buffer memory that is coupled to the memory block and that operates at a
higher speed than the memory block; and
a first selection portion that is coupled between the logic block and the
buffer memory, the first selection portion being responsive to external
data and to the logic block to transmit the external data to the memory
block via the buffer memory or to transmit data from the logic block to
the memory block via the buffer memory.
2. A Merged Memory and Logic (MML) integrated circuit device comprising:
a memory block;
a logic block;
a buffer memory that is coupled to the memory block and that operates at a
higher speed than the memory block;
a first selection portion that is coupled between the logic block and the
buffer memory, the first selection portion being responsive to external
data and to the logic block to transmit external data or data from the
logic block to the memory block via the buffer memory; and
a Built-In Self-Test (BIST) block that is coupled to the first selection
portion to transmit BIST data to the memory block via the buffer memory.
3. An MML integrated circuit device according to claim 2 wherein the first
selection portion comprises a plurality of multiplexers, a respective one
of which is coupled to the external data, the logic block and the BIST
block.
4. A Merged Memory and Logic (MML) integrated circuit device comprising:
a memory block;
a logic block;
a buffer memory that is coupled to the memory block and that operates at a
higher speed than the memory block;
a first selection portion that is coupled between the logic block and the
buffer memory, the first selection portion being responsive to external
data and to the logic block to transmit external data or data from the
logic block to the memory block via the buffer memory; and
a data expansion portion that is coupled between the external data and the
first selection portion, to replicate the external data a predetermined
number of times and to transmit the replicated external data to the first
selection portion.
5. A Merged Memory and Logic (MML) integrated circuit device comprising:
a memory block;
a logic block;
a buffer memory that is coupled to the memory block and that operates at a
higher speed than the memory block;
a first selection portion that is coupled between the logic block and the
buffer memory, the first selection portion being responsive to external
data and to the logic block to transmit external data or data from the
logic block to the memory block via the buffer memory; and
a second selection portion that is responsive to parallel data from the
buffer memory, to sequentially select portions of the parallel data from
the buffer memory and to sequentially output the selected portions of the
parallel data to external of the MML integrated circuit device.
6. An MML integrated circuit device according to claim 4 further comprising
a second selection portion that is responsive to parallel data from the
buffer memory, to sequentially select portions of the parallel data from
the buffer memory and to sequentially output the selected portions of the
parallel data to external of the MML integrated circuit device.
7. An MML integrated circuit device according to claim 6 further comprising
an input/output portion that is coupled to the data expansion portion and
to the second selection portion to provide the external data to the data
expansion portion and to receive the sequentially selected portions of the
parallel data from the second selection portion for output external of the
MML integrated circuit device.
8. An MML integrated circuit device according to claim 6 further comprising
a third selection portion that is coupled to the logic circuit and to the
second selection portion to select the output of the logic circuit or the
sequentially selected portions of the parallel data from the second
selection portion for output external of the MML integrated circuit
device.
9. A Merged Memory and Logic (MML) integrated circuit device comprising:
a memory block;
a logic block;
a buffer memory that is coupled to the memory block and that operates at a
higher speed than the memory block; and
a first selection portion that is coupled between the logic block and the
buffer memory, the first selection portion being responsive to external
data and to the logic block to transmit external data or data from the
logic block to the memory block via the buffer memory;
wherein the memory block comprises a synchronous Dynamic Random Access
Memory (DRAM) and wherein the buffer memory comprises a Static Random
Access Memory (SRAM) that is smaller than the synchronous DRAM.
10. A Merged Memory and Logic (MML) integrated circuit device comprising:
a memory block;
a logic block;
a buffer memory that is coupled to the memory block and that operates at a
higher speed than the memory block;
a first selection portion that is coupled between the logic block and the
buffer memory, the first selection portion being responsive to external
data and to the logic block to transmit external data or data from the
logic block to the memory block via the buffer memory;
a Built-In Self-Test (BIST) block that is coupled to the first selection
portion to transmit BIST data to the memory block via the buffer memory;
and
a data expansion portion that is coupled between the external data and the
first selection portion, to replicate the external data a predetermined
number of times and to transmit the replicated external data to the first
selection portion;
wherein the first selection portion comprises a plurality of multiplexers,
a respective one of which is coupled to the logic block, the BIST block
and the data expansion portion.
11. An MML integrated circuit device according to claim 10 further
comprising a second selection portion that is responsive to parallel data
from the buffer memory, to sequentially select portions of the parallel
data from the buffer memory and to sequentially output the selected
portions of the parallel data to external of the MML integrated circuit
device.
12. An MML integrated circuit device according to claim 11 further
comprising an input/output portion that is coupled to the data expansion
portion and to the second selection portion to provide the external data
to the data expansion portion and to receive the sequentially selected
portions of the parallel data from the second selection portion for output
external of the MML integrated circuit device.
13. An MML integrated circuit device according to claim 12 further
comprising a third selection portion that is coupled to the logic circuit
and to the second selection portion to select the output of the logic
circuit or the sequentially selected portions of the parallel data from
the second selection portion for output external of the MML integrated
circuit device.
14. An MML integrated circuit device according to claim 10 wherein the
memory block comprises a synchronous Dynamic Random Access Memory (DRAM)
and wherein the buffer memory comprises a Static Random Access Memory
(SRAM) that is smaller than the synchronous DRAM.
15. A method of detecting errors in a Merged Memory and Logic (MML)
integrated circuit device that includes a memory block, a logic block and
a buffer memory that is coupled to the memory block, the method comprising
the steps of:
storing external data from external of the MML integrated circuit device
into the buffer memory;
storing the external data from the buffer memory into the memory block;
reading the external data from the memory block;
storing the read external data from the memory block into the buffer
memory; and
outputting the read external data from the buffer memory to external of the
MML integrated circuit device.
16. A method according to claim 15 wherein the step of storing external
data from external of the MML integrated circuit device into the buffer
memory comprises the steps of:
applying external data from external of the MML integrated circuit device
to the MML integrated circuit device;
replicating the external data a predetermined number of times in the MML
integrated circuit device; and
storing the replicated external data in the buffer memory.
17. A method according to claim 16:
wherein the step of storing external data from external of the MML
integrated circuit device into the buffer memory is repeatedly performed
to fill the buffer memory with the external data; and
wherein the step of storing the external data from the buffer memory into
the memory block is repeatedly performed to fill the memory block with the
stored external data from the buffer memory.
18. A method according to claim 15 wherein the step of outputting the read
external data from the buffer memory to external of the MML integrated
circuit device comprises the steps of:
sequentially selecting portions of the read external data from the buffer
memory; and
sequentially outputting the selected portions of the read external data to
external of the MML integrated circuit device.
19. A method according to claim 15 wherein the step of storing external
data from external of the MML integrated circuit device into the buffer
memory comprises the steps of:
applying m.times.l items of external data to the buffer memory;
storing the m.times.l items of external data in the buffer memory by
applying an address and a write signal to the buffer memory; and
applying m.times.l.times.n items of external data to the buffer memory by
performing the steps of applying m.times.l items and storing m.times.l
items n times.
20. A method according to claim 19, wherein the step of applying m.times.l
items comprises the steps of:
applying m items of external data from external of the MML integrated
circuit device; and
extending the m items of data to m.times.l items of data.
21. A method according to claim 15, wherein the step of reading comprises
the step of:
reading m.times.l.times.n items of data from the memory block by applying
an address and a read signal to the memory block and applying the read
data to the buffer memory; and
wherein the step of storing the read external data from the memory block
into the buffer memory comprises the step of:
storing m.times.l.times.n items of data by applying an address and a write
signal to the buffer memory.
22. A method according to claim 21, wherein the step of outputting
comprises the steps of:
reading m.times.l items of data form the buffer memory by applying an
address and a read signal to the buffer memory;
outputting the m.times.l items of data to external of the MML integrated
circuit device during 1 groups of clock cycles;
performing the steps of reading m.times.l items and outputting the
m.times.l items n times; and
outputting all the items of data stored in the DRAM to external of the MML
integrated circuit device by repeatedly performing the steps of reading
m.times.l.times.n items, storing m.times.l.times.n items, reading
m.times.l items and outputting the m.times.l items.
Description
FIELD OF THE INVENTION
This invention relates to integrated circuit devices, and more particularly
to Merged Memory and Logic (MML) integrated circuit devices and methods of
testing the same.
BACKGROUND OF THE INVENTION
Integrated circuit devices, such as integrated circuit memory devices and
integrated circuit logic devices, are widely used in consumer and
commercial applications. Recently, Merged Memory and Logic (MML)
integrated circuit devices have been developed. MML integrated circuit
devices generally include a large capacity memory and a large logic block
that are merged in one integrated circuit device. Thus, an MML integrated
circuit device can replace discrete memory and logic chips that are used
in personal computers and other consumer and commercial devices. MML
devices are described, for example, in U.S. Pat. No. 5,848,016 to Kwak,
entitled "Merged Memory and Logic (MML) Integrated Circuits and Methods
Including Serial Data Path Comparing", and assigned to the assignee of the
present application, the disclosure of which is hereby incorporated herein
by reference.
MML integrated circuit devices may present new challenges for the testing
thereof. In particular, an MML integrated circuit device generally
provides a large number of internal data paths between the memory block
and the logic block. For example, up to 256 or more internal data paths
may be provided. Since many of these internal data paths are not brought
out to external MML integrated circuit device pads, it may be difficult to
access all of the internal data paths in order to test the memory block.
Stated differently, in order to test a conventional memory integrated
circuit device, test equipment is coupled to the pads of the memory
integrated circuit device. However, the memory block in an MML integrated
circuit device may be difficult to test because the memory is connected to
the external pads through the logic block.
It is also known to provide MML integrated circuit devices that include a
buffer memory, generally having a smaller capacity than the memory block.
The buffer memory is connected to the memory block and generally operates
at a higher speed than the memory block. For example, the memory block may
be a Dynamic Random Access Memory (DRAM) and more preferably a synchronous
DRAM, and the buffer memory may be a Static Random Access Memory (SRAM).
The buffer memory operates as a buffer between the memory block and the
logic block. Thus, the memory block transmits and receives data only to
and from the buffer memory. The logic block also transmits data to and
receives data from the buffer memory.
In an MML integrated circuit device that includes a buffer memory between a
memory block and a logic block, it may be difficult to test the memory
block. In particular, in a conventional integrated circuit memory device,
the memory cells of the memory device may be tested by directly accessing
the memory from external of the integrated circuit memory device. It is
known to use a multiplexer to select different modes, such as a normal
operation mode, an external test mode and a Built-In Self-Test (BIST)
mode, to directly access the memory.
In an MML integrated circuit device, when there are a large number of input
and output data buses for the memory block, a large number of data buses
may need to be added between the memory block and the buffer memory for
normal operation and between the BIST circuit and the memory block for
self-test. Moreover, a large number of data buses may need to be added
between the multiplexer and the memory block in order to directly access
the memory block from outside the MML integrated circuit device. The
addition of these buses may unduly increase the size of the MML integrated
circuit device. Moreover, it may be difficult to test the performance of
the memory block during its normal operation when it is communicating only
with the buffer memory.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide improved MML
integrated circuit devices.
It is another object of the present invention to provide MML integrated
circuit devices that need not unduly increase the area thereof to
accommodate buses for testing.
It is still another object of the present invention to provide MML
integrated circuit devices and methods of testing thereof that can detect
errors in the memory block thereof when the memory block communicates with
the logic block through a buffer memory.
These and other objects are provided, according to the present invention,
by an MML integrated circuit device that includes a memory block, a logic
block and a buffer memory, and a selection circuit that is coupled between
the logic block and the buffer memory. The selection circuit is responsive
to external data and to the logic block, to transmit the external data or
data from the logic block to the memory block via the buffer memory. Thus,
MML integrated circuit devices according to the invention can use the
buffer memory to access the memory block during a normal operational mode
and during a test mode.
MML integrated circuit devices according to the invention also preferably
include a Built-In Self-Test (BIST) block that is coupled to the selection
circuit to transmit BIST data to the memory block via the buffer memory.
The selection circuit preferably includes a plurality of multiplexers, a
respective one of which is coupled to the external data, to the logic
block and to the BIST block.
The buffer memory generally is of smaller size than the memory block. MML
integrated circuit devices according to the present invention preferably
include a data expansion circuit that is coupled between the external data
and the selection circuit, to replicate the external data a predetermined
number of times and to transmit the replicated external data to the
selection circuit.
A second selection circuit also may be included that is responsive to
parallel data from the buffer memory, to sequentially select portions of
the parallel data from the buffer memory and to sequentially output the
selected portions of the parallel data to external of the MML integrated
circuit device. A third selection circuit also may be included that is
coupled to the logic circuit and to the second selection circuit, to
select the output of the logic circuit or the sequentially selected
portions of the parallel data from the second selection circuit, for
output external of the MML integrated circuit device.
Errors may be detected in an MML integrated circuit device that includes a
memory block, a logic block and a buffer memory, by storing external data
from external of the MML integrated circuit device into the buffer memory,
and storing the external data from the buffer memory into the memory
block. The external data is read from the memory block and the read
external data is stored from the memory block into the buffer memory. The
read external data is output from the buffer memory to external of the MML
integrated circuit device. The external data may be stored from external
of the MML integrated circuit device into the buffer memory by applying
external data from external of the MML integrated circuit device to the
MML integrated circuit device, replicating the external data a
predetermined number of times in the MML integrated circuit device and
storing the replicated external data in the buffer memory.
The step of storing external data from external of the MML integrated
circuit device into the buffer memory may be repeatedly performed to fill
the buffer memory with the external data. Moreover, the step of storing
the external data from the buffer memory into the memory block may be
repeatedly performed to fill the memory block with the stored external
data from the buffer memory. In order to output the read external data
from the buffer memory to external of the MML integrated circuit device,
portions of the read external data are sequentially selected from the
buffer memory. The selected portions of the read external data are
sequentially output to external of the MML integrated circuit device.
Accordingly, MML integrated circuit devices that include buffer memories
may be tested without the need to unduly increase the size of the MML
integrated circuit device. A memory block may also be tested during a
normal operation of interfacing with the buffer memory.
BRIEF DESCRIPTION OF THE DRAWINGS
FIG. 1 is a block diagram of MML integrated circuit devices according to a
preferred embodiment of the present invention.
FIG. 2 shows a buffer memory and a memory block of FIG. 1.
FIG. 3 is a timing diagram of signals for the MML integrated circuit device
shown in FIG. 1.
FIG. 4 is a flowchart illustrating methods of detecting errors in the
memory block of FIG. 1.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS
The present invention now will be described more fully hereinafter with
reference to the accompanying drawings, in which preferred embodiments of
the invention are shown. This invention may, however, be embodied in many
different forms and should not be construed as limited to the embodiments
set forth herein; rather, these embodiments are provided so that this
disclosure will be thorough and complete, and will fully convey the scope
of the invention to those skilled in the art. In the drawings, the
thickness of layers and regions are exaggerated for clarity. Like numbers
refer to like elements throughout.
FIG. 1 is a block diagram of MML integrated circuit devices according to
the invention. Referring to FIG. 1, an integrated circuit device 101
according to an embodiment of the present invention includes a data
input/output portion 111, a data expansion portion 121, a BIST circuit
131, first through third selection portions 141 through 143, a buffer
memory 151 such as an SRAM, a memory block such as a synchronous DRAM 161,
a logic block or logic circuit 171, an output control portion 181, and a
selection control portion 191.
The external data input from external of the MML integrated circuit device
is transmitted to the data expansion portion 121 through the data
input/output portion 111. The data input/output portion 111 includes, for
example, sixteen pads 113, sixteen input buffers 115, and sixteen output
buffers 117. The sixteen input buffers 115 convert the voltage level of
the data input through the sixteen input and output pads 113. For example,
the sixteen input buffers 115 convert the voltage of a Transistor
Transistor Logic (TTL) level into the voltage of a Complementary Metal
Oxide Semiconductor (CMOS) level. In general, the voltage of the TTL level
is 0 through 5.0 volts. The voltage of the CMOS level is 0 through 3.3
volts.
The sixteen output buffers 117 output the data from the third selection
portion 143 in response to the output of the output control portion 181.
Specifically, the sixteen output buffers 117 are activated when the output
of the output control portion 181 is logic low and transmit the data
output from the third selection portion 143 to the sixteen input/output
pads 113. The sixteen output buffers 117 are deactivated when the output
of the output control portion 181 is logic high and do not transmit the
data output from the third selection portion 143 to the sixteen
input/output pads 113. The sixteen output buffers 117 convert the voltage
level of the data output from the third selection portion 143 when they
are activated. For example, the sixteen output buffers 117 convert CMOS
voltage levels into TTL voltage levels.
The data expansion portion 121 extends or replicates the data output from
the data input/output portion 111 in response to an external control
signal MEMTEST, and transmits the extended or replicated data to the first
selection portion 141. The external control signal MEMTEST is activated
only when the buffer memory 151 or the DRAM 161 is tested. For example,
the data expansion portion 121 may be connected to the data input/output
portion 111 through sixteen data buses 125 and to the first selection
portion 141 through 128 data buses DB1. Therefore, the data expansion
portion 121 copies sixteen bits or groups of data transmitted from the
data input/output portion 111 eight times to extend to 128 bits or groups
of data, and transmits the extended data to the first selection portion
141. The data expansion portion 121 extends the sixteen data bits or
groups of bits to the 128 data bits or groups of bits in order to make the
number of the data input to the first selection portion 141 equal to the
number of the data output from the first selection portion 141. As shown
in FIG. 1, there may be 128 data buses DB3 between the first selection
portion 141 and the buffer memory 151.
The BIST circuit 131 tests the function of the buffer memory 151 and the
DRAM 161. The BIST circuit 131 tests the buffer memory 151 through the
first selection portion 141 and tests the DRAM 161 through the first
selection portion 141 and the buffer memory 151. Specifically, in order to
test the DRAM 161, the BIST circuit 131 stores data in the DRAM 161
through the first selection portion 141 and the buffer memory 151 and the
data stored in the DRAM 161 is directly received through the buffer memory
151. The BIST circuit 131 transmits data to the first selection portion
141 through 128 data buses DB2.
The first selection portion 141 selects one of the data output from the
data expansion portion 121, the data output from the BIST circuit 131, and
the data output from the logic circuit 171 and transmits the selected data
to the buffer memory 151. The first selection portion 141 preferably
includes a plurality of multiplexers, each having three inputs and one
output.
The buffer memory 151, for example an SRAM, stores the data received from
the first selection portion 141 and transmits the data to the DRAM 161, or
reads the data stored in the DRAM 161 and stores the read data in the
buffer memory 151, in response to the control signals SCLK, Saddr, WEN,
sw_m, and sr_m that are input from external of the MML device. The buffer
memory 151 transmits the stored data to the logic circuit 171, the second
selection portion 142, and the BIST circuit 131 in response to the control
signals SCLK, Saddr, WEN, sw_m, and sr_m. The DRAM 161 reads the data
stored in the buffer memory 151 and writes data stored in the DRAM 161 to
the buffer memory 151 in response to control signals DCLK, MEMTEST, RASB,
CASB, WEB, ROWADD, and COLADD that are input from external of the MML
device.
The number of the input and output data buses of the buffer memory 151
which communicate with the first selection portion 141 preferably is
smaller than the number of the input and output data buses of the buffer
memory 151 which communicate with the DRAM 161. For example, there may be
128 input and output data buses of the buffer memory 151 which communicate
with the first selection portion 141 and 512 input and output data buses
of the buffer memory 151 which communicate with the DRAM 161. The buffer
memory 151 and the DRAM 161 will be described in detail with reference to
FIG. 2.
The logic circuit 171 receives data from the buffer memory 151 and controls
the operations of the buffer memory 151 and the DRAM 161 through the first
selection portion 141. The logic circuit 171 receives data from the buffer
memory 151 through 128 data buses DB4 and transmits the data to the third
selection portion 143 through sixteen data buses DB5.
A selection control portion 191 combines control signals MEMTEST and NORMAL
that are input from external of the MML device and controls the logic
circuit 171 and the second selection portion 142. The selection control
portion 191 includes, for example, three pads 193, three buffers 195, and
a logic portion 197. The three buffers 195 convert the voltage levels of
the external control signals MEMTEST input through the three pads 193. For
example, the three buffers 195 convert TTL voltage levels into CMOS
voltage levels. The logic portion 197 combines the control signals MEMTEST
that are output from the three buffers 195 and controls the operations of
the logic circuit 171 and the second selection portion 142. The logic
portion 197 includes an AND gate 198 for performing an AND operation on
the control signals MEMTEST that are output from the three buffers 195 and
the control signal MEMTEST that is input from external of the MML device,
and an AND gate 199 for performing an AND operation on the control signals
MEMTEST that are output from the three buffers 195 and the control signal
NORMAL that is input from external of the MML device.
The second selection portion 142 selectively transmits the data that is
output from the buffer memory 151 to the third selection portion 143.
There are, for example, 128 input data buses DB4 and 16 output data buses
DB6 in the second selection portion 142. Therefore, the second selection
portion 142 selects sixteen items of data from the 128 items of input data
and simultaneously outputs the sixteen data items in response to the
output of the selection control portion 191. The selection portion 142
preferably includes sixteen multiplexers each having eight inputs for
inputting the output of the buffer memory 151.
The third selection portion 143 selectively transmits the data that is
output from the logic circuit 171 and the second selection portion 142 to
the data input/output portion 111. There are, for example, sixteen input
data buses DB5, sixteen input data buses DB6, and sixteen output data
buses DB7. Therefore, the third selection portion 143 selects either the
data output from the logic circuit 171 or the data output from the second
selection portion 142 and simultaneously outputs the sixteen items of data
in response to the control signals MEMTEST and NORMAL. The third selection
portion 143 preferably includes sixteen multiplexers each having two
inputs and one output.
The output control portion 181 controls the output buffers 117 of the data
input/output portion 111 in response to the control signals MEMTEST and
NORMAL that are input from external of the MML device and a control signal
TRST that is output from the DRAM 161. The output control portion 181
includes an AND gate 183 and a NOR gate 185. The AND gate 183 inputs the
control signal MEMTEST and the control signal TRST and performs an AND
operation. Specifically, the AND gate 183 outputs logic low when either
the control signal MEMTEST or the control signal TRST is logic low and
outputs logic high when the control signal MEMTEST and the control signal
TRST are logic high. The NOR gate 185 inputs the output of the AND gate
183 and the control signal NORMAL and performs a NOR operation.
Specifically, the NOR gate 185 outputs logic low when either the output of
the AND gate 183 or the control signal NORMAL is logic high and outputs
logic high when the output of the AND gate 183 and the control signal
NORMAL are logic low.
When the output of the NOR gate 185 is logic low, the output buffers 117
are activated and transmit the data output from the third selection
portion 143 to the sixteen input and output pads 113. When the DRAM 161 is
tested, the control signals MEMTEST and TRST become logic high. The
control signals TRST and NORMAL become logic high in a normal operation.
When either the control signals MEMTEST and TRST or the control signal
NORMAL is logic high, the output of the NOR gate 185 becomes logic low.
Specifically, the output buffers 117 are activated only when the DRAM 161
is tested or in the normal operation. When the DRAM 161 is not tested or
not in the normal operation, the output buffers 117 are deactivated.
Accordingly, the amount of current consumed in the output buffers 117 may
be reduced.
As shown in FIG. 1, the number of the data buses input to the buffer memory
151 may be much smaller than the number of the data buses of a
conventional MML integrated circuit device for directly testing the DRAM
161. The DRAM 161 and the buffer memory 151 are tested or controlled using
the first selection portion 141.
FIG. 2 shows the buffer memory 151 and the DRAM 161 of FIG. 1. Referring to
FIG. 2, the buffer memory 151 includes a switching circuit 211 in an input
port and a multiplexer 231 in an output port. The switching circuit 211
has one input port si and four output ports sol through so4. The switching
circuit 211 selects one of the four output ports sol through so4 in
response to control signals sw_m[1:0] and outputs data to the selected
output port. The input port si of the switching circuit 211 is connected
to the first and second selection portions 141 and 142, the logic circuit
171, and the BIST circuit 131 through the 128 data buses. In FIG. 2, the
four output ports sol through so4 are connected to a memory array 221
through 128 data buses. The memory array 221 is comprised of four blocks
251 through 254. Each of the four blocks 251 through 254 includes, for
example, 128 bit lines. Therefore, the 128 items of data are input to the
memory array 221 from switching circuit 211 four times in order to store
the data in the buffer memory 151.
The buffer memory 151 stores the data output from the switching circuit 211
in response to the control signals Saddr, WEN, and SCLK. The multiplexer
231 has four input ports mi0 through mi4 and one output port mo and is
controlled by the control signals sr_m. The four input ports mi0 through
mi4 are connected to 512 bit lines of the memory array 221. Therefore, all
the items of data stored in the memory array 221 may be simultaneously
transmitted to the multiplexer 231. The multiplexer 231 selectively
outputs the data through the one output port mo. For example, the
multiplexer 231 receives the 512 items of data and selectively outputs 128
items of data from the received data. Therefore, the multiplexer 231
performs data outputting four times in order to output the 512 items of
data.
The 512 bit lines of the memory array 221 are respectively connected to the
512 input and output data buses of the DRAM 161. Therefore, the data
stored in the buffer memory 151 can be simultaneously stored in the DRAM
161. The DRAM 161 reads data from the buffer memory 151 or transmits data
to the buffer memory 151 in response to the control signals DCLK, MEMTEST,
RASB, CASB, WEB, ROWADD, and COLADD. The DRAM 161 of FIG. 2 preferably is
a synchronous DRAM which is operated by a clock signal DCLK.
As shown in FIG. 2, there are, for example, 128 input ports mi in the
switching circuit 211 and 512 input and output data buses in the DRAM 161.
Since the number of the input ports mi of the switching circuit 211 is
smaller than the number of the input and output data buses of the DRAM
161, the number of the data buses (DB3 of FIG. 1) connected to the input
ports of the buffer memory 151 may be reduced. Accordingly, the size of
the MML integrated circuit device may be reduced.
FIG. 3 is a timing diagram of signals for normal operation of the MML
integrated circuit device shown in FIG. 1. FIG. 4 is a flowchart
illustrating methods for detecting errors in the memory block of FIG. 1.
Referring to FIG. 1 through FIG. 3, methods of detecting errors in the
DRAM, shown in FIG. 4, will be described.
Before detecting errors in the DRAM 161, errors in the buffer memory 151
are detected. When no error is found in the buffer memory 151, errors in
the DRAM 161 are detected.
A method of detecting errors in the buffer memory 151 now will be
described. First, processes for storing data in the buffer memory 151 will
be described. Sixteen items of data are applied from external of the MML
device to the input and output pads 113. The sixteen items of data are
extended, for example, to 128 items of data by passing through the data
expansion portion 121. The 128 items of data are transmitted to the buffer
memory 151 through the first selection portion 141. The 128 items of data
are stored in the buffer memory 151 by applying an address signal Saddr
and write signals WEN and sw_m from external of the MML device. Then, 512
items of data are stored in the buffer memory 151 by repeating the above
processes four times.
Second, processes for reading the 512 items of data stored in the buffer
memory 151 will be described. The 128 items of data stored in the buffer
memory 151 are read by applying the address signal Saddr and the read
signal sr_m from external of the MML device to the buffer memory 151 and
are transmitted to the second selection portion 142. The data stored in
the second selection portion 142 is output to external of the MML device
through the sixteen input and output pads 113 during eight groups of clock
cycles by sixteen during one clock cycle. The 512 items of data stored in
the buffer memory 151 can be read to external of the MML device by
repeating the above processes. It is possible to detect the errors of the
buffer memory 151 by comparing the data read to external of the MML device
to the external data input to the MML device at the input and output pads
113 and analyzing the two groups of data.
When no errors are detected in the buffer memory 151, errors in the DRAM
161 are detected. When there are errors in the buffer memory 151, the
errors in the DRAM 161 may be detected after recovering the errors in the
buffer memory 151 using conventional techniques. When errors in the buffer
memory 151 are not recoverable, the MML integrated circuit device may be
unusable.
Referring to FIG. 4, methods of detecting errors in the DRAM 161 include
the steps of storing data to the buffer memory (Blocks 401, 406, and 411),
storing in the DRAM (Blocks 416, 421, and 426), reading the DRAM (Blocks
431 and 436), and reading the buffer memory (Blocks 441, 446, 451, and
456).
The step of storing data to the buffer memory includes steps one through
three (Blocks 401, 406, and 411). In step one (Block 406), m items of
external data, for example sixteen items of external data, are applied to
the input and output pads 113. The m items of data are extended to l items
of data, for example 128 items of data, by passing through the data
expansion portion 121. In step two (Block 406), the address signal Saddr
and the write signal WEN are applied from external of the MML device to
the buffer memory 151. Then, the l items of data are stored in the buffer
memory 151. In step three (Block 411), steps one (Block 401) and two
(Block 406) are performed n times, for example four times. In the step
three (Block 411), m.times.l.times.n items of data, for example 512 items
of data, are stored in the buffer memory 151. The steps one through three
(Blocks 401, 406, and 411) are preferably performed during four clock
cycles (t1 of FIG. 3).
The step of storing the data stored in the buffer memory in the DRAM
includes steps four through six (Blocks 416, 421, and 426). In step four
(Block 416), the m.times.l.times.n items of data are read by applying the
address signal Saddr from external of the MML device to the buffer memory
151 and are transferred to the DRAM 161. In step five (Block 421), the
m.times.l.times.n items of data transmitted from the buffer memory 151 are
stored in the DRAM 161 at the same time by applying the address signals
COLADD and ROWADD, the control signals RASB and CASB, and the write signal
WEB to the DRAM 161. Steps four and five (Blocks 416 and 421) preferably
are performed during one clock cycle (t2 of FIG. 3). In step six (Block
426), data is stored in all the memory cells of the DRAM 161 by repeatedly
performing steps one through five (Blocks 401, 406, 411, 416, and 421).
The step of reading the data stored in the DRAM and storing the read data
in the buffer memory 151 includes steps seven and eight (Blocks 431 and
436). In step seven (Block 431), the m.times.l.times.n items of data are
read from the data stored in the DRAM 161 by applying the address signals
COLADD and ROWADD and the control signals RASB and CASB to the DRAM 161,
and are transmitted to the buffer memory 151. In step eight (Block 436),
the m.times.l.times.n items of data transmitted from the DRAM 161 are
re-stored in the buffer memory 151 at the same time by applying the
address signal Saddr and the write signals WEN and sw_m to the buffer
memory 151. Steps seven and eight (Block 431 and 436) preferably are
performed during one clock cycle (t3 of FIG. 3).
The step of outputting the data stored in the buffer memory to external of
the MML device includes steps nine through twelve (Blocks 441, 446, 451,
and 456). In step nine (Block 441), the address Saddr and the write signal
sr_m are applied to the buffer memory 151. Then, m.times.l items of data,
for example 128 items of data, are read from the m.times.l.times.n items
of data stored in the buffer memory 151 and are transmitted to the second
selection portion 142. Step nine (Block 441) preferably is performed in a
time t4 of FIG. 3. In step ten (Block 446), the m.times.l items of data
transmitted to the second selection portion 142 are transmitted to
external of the MML device through m, for example sixteen, input and
output pads 113, during l times of clock cycles by m at one time. The data
transmitted to the input and output pads 113 is controlled by the output
control portion 181 and is output to external of the MML device. Step ten
(Block 446) is performed in a time section t5 of FIG. 3.
In step 11 (Block 451), the m.times.l.times.n items of data stored in the
buffer memory 151 are output to external of the MML device by repeatedly
performing steps nine and ten (Block 441 and 446). In step twelve (Block
456), all the items of data stored in the DRAM 161 are read to external of
the MML device by repeatedly performing steps seven through eleven (Block
431 through 451).
It is possible to detect errors in the DRAM 161 by comparing the external
data that is input from external of the MML device to the input and output
pads 113, with the data read to external of the MML device through the
input and output pads 113 and analyzing the two sets of data. Also, it is
possible to check the operational speed of the DRAM 161 by analyzing the
time taken to input external data to the input and output pads 113 and the
time taken for the data to be stored in the DRAM 161 and output to
external of the MML device. It is possible to test the DRAM 161 using the
BIST circuit 131 by the above-mentioned method.
Accordingly, the number of data buses for detecting errors of the DRAM 161
may be reduced by accessing the DRAM 161 using the input and output data
buses of the buffer memory 151, in which the number of the input and
output data buses is smaller than that of the input and output data buses
in the DRAM 161, without directly accessing the DRAM 161 through the input
and output pads 113. Accordingly, the size of the MML integrated circuit
device may be reduced. Also, it is possible to correctly check the
operational speed of the DRAM 161 during the normal operation of the MML
integrated circuit device.
In the drawings and specification, there have been disclosed typical
preferred embodiments of the invention and, although specific terms are
employed, they are used in a generic and descriptive sense only and not
for purposes of limitation, the scope of the invention being set forth in
the following claims.
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