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United States Patent | 6,165,914 |
Fang | December 26, 2000 |
The rapid growth of thick thermally grown oxide layers on silicon wafers is described herein. By patterning and etching a plurality of pillars on the surface of the silicon wafer, oxide growth is primarily lateral and not vertical, enabling it to proceed much faster. In other embodiments, the pillars are fabricated with an oxygen barrier on their top surface, preventing oxide growth on the top of the pillars and resulting in an oxide layer with a more planar upper surface.
Inventors: | Fang; Wingra T. (Saratoga, CA) |
Assignee: | Agilent Technologies (Palo Alto, CA) |
Appl. No.: | 968149 |
Filed: | November 12, 1997 |
Current U.S. Class: | 438/787; 257/E21.285; 257/E21.288; 438/770 |
Intern'l Class: | H01L 021/31 |
Field of Search: | 438/242,246,248,270,192,268,269,416,621,787,770 |
5103276 | Apr., 1992 | Shen et al. | 357/23. |
5106776 | Apr., 1992 | Shen et al. | 438/248. |
5300450 | Apr., 1994 | Shen et al. | 438/243. |
5851899 | Dec., 1998 | Weigand | 438/427. |