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United States Patent | 6,165,876 |
Yamazaki ,   et al. | December 26, 2000 |
After an ion having n-type or p-type impurity necessary for a crystalline silicon film is implanted by a known ion implantation or ion doping, a laser light or an equivalent intense light is irradiated onto the crystalline silicon film, to thereby improve the crystallinity of the silicon film and activate the impurity, and in the succeeding process, the silicon film is not thermally annealed at 450.degree. C. or higher. Also, under a state where a substrate is heated at 50 to 500.degree. C., preferably 200 to 350.degree. C., an ion having n-type or p-type impurity necessary for a crystalline silicon film is implanted by the ion doping, and in the succeeding process, the silicon film is not thermally annealed at 450.degree. C. or higher.
Inventors: | Yamazaki; Shunpei (4-10-20, Seijo, Setagaya-ku, Tokyo 157, JP); Kusumoto; Naoto (202, 2-26-2, Higashi-Ohtake, Isehara-shi, Kanagawa-ken, 259-11, JP); Ohnuma; Hideto (Flat SEL-A 306, 304-1, Hase, Atsugi-shi, Kanagawa-ken 243, JP); Takemura; Yasuhiko (San White Harashima 202, 934-3, Aiko, Atsugi-shi, Kanagawa-ken 243, JP); Tanaka; Koichiro (Flat SEL-B 102, 304-1, Hase, Atsugi-shi, Kanagawa-ken 243, JP) |
Appl. No.: | 590417 |
Filed: | January 24, 1996 |
Jan 30, 1995[JP] | 7-032969 | |
Jan 30, 1995[JP] | 7-032970 |
Current U.S. Class: | 438/517; 257/E21.134; 257/E21.336; 257/E21.347; 257/E21.413; 257/E29.278; 438/163; 438/166; 438/217; 438/289; 438/291; 438/530; 438/532 |
Intern'l Class: | H01L 021/265; H01L 021/266 |
Field of Search: | 438/163,166,217,289,291,530,532,535,540,514,517,FOR 184,FOR 201,FOR 155 |
4168990 | Sep., 1979 | Lenie et al. | 438/530. |
4169740 | Oct., 1979 | Kalbitzer et al. | 438/530. |
4199773 | Apr., 1980 | Goodman et al. | 438/163. |
4463492 | Aug., 1984 | Maeguchi | 438/166. |
4775641 | Oct., 1988 | Duffy et al. | 438/166. |
5064775 | Nov., 1991 | Chang | 438/166. |
5244820 | Sep., 1993 | Kamata et al. | 438/530. |
5403762 | Apr., 1995 | Takemura | 438/166. |
5501989 | Mar., 1996 | Takayama et al. | 438/166. |
5532175 | Jul., 1996 | Racanelli et al. | 438/163. |
5565690 | Oct., 1996 | Theodore et al. | 438/530. |
"Implantation temperature effect on polycrystalline silicon by ion shower doping," Y. Mishima, et al., Journal of Applied Physics; vol. 74; Dec. 15, 1993; No. 12. |