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United States Patent | 6,159,871 |
Loboda ,   et al. | December 12, 2000 |
This invention pertains to a method for producing hydrogenated silicon oxycarbide (H:SiOC) films having low dielectric constant. The method comprises reacting an methyl-containing silane in a controlled oxygen environment using plasma enhanced or ozone assisted chemical vapor deposition to produce the films. The resulting films are useful in the formation of semiconductor devices and have a dielectric constant of 3.6 or less.
Inventors: | Loboda; Mark Jon (Midland, MI); Seifferly; Jeffrey Alan (Bay City, MI) |
Assignee: | Dow Corning Corporation (Midland, MI) |
Appl. No.: | 086811 |
Filed: | May 29, 1998 |
Current U.S. Class: | 438/786; 257/E21.277; 438/758; 438/778 |
Intern'l Class: | H01L 021/31; H01L 021/469 |
Field of Search: | 438/931,769,778,780,786,758 |
4842888 | Jun., 1989 | Haluska et al. | 427/38. |
4981724 | Jan., 1991 | Hochberg et al. | 427/255. |
5156881 | Oct., 1992 | Okano et al. | 427/572. |
5182000 | Jan., 1993 | Antonelli et al. | 204/181. |
5208069 | May., 1993 | Clark et al. | 427/226. |
5284730 | Feb., 1994 | Takei et al. | 430/66. |
5364666 | Nov., 1994 | Williams et al. | 427/579. |
5465680 | Nov., 1995 | Loboda | 117/84. |
5525550 | Jun., 1996 | Kato | 437/238. |
5530581 | Jun., 1996 | Cogan | 359/265. |
5599740 | Feb., 1997 | Jang et al. | 437/190. |
5800877 | Sep., 1998 | Maeda et al. | 427/535. |
5874367 | Feb., 1999 | Dobson | 438/787. |
Foreign Patent Documents | |||
0289402 | Nov., 1988 | EP | . |
0 469 926 A1 | Feb., 1992 | EP | . |
0 533 129 A2 | Mar., 1993 | EP | . |
0 589 678 A2 | Mar., 1994 | EP | . |
0 771 886 A1 | May., 1997 | EP | . |
0 774 533 A1 | May., 1997 | EP | . |
0774533 | May., 1997 | EP | . |
0 926 724 A2 | Dec., 1998 | EP | . |
0 926 715 A2 | Jun., 1999 | EP | . |
0 935 283 A2 | Aug., 1999 | EP | . |
4404690 | Aug., 1995 | DE | . |
19084375 | Jan., 1999 | DE. | |
199 04 311 A1 | Jan., 1999 | DE | . |
84222659 | Oct., 1984 | JP. | |
8-279505 | Oct., 1996 | JP. | |
9064029 | Mar., 1997 | JP. | |
9251997 | Sep., 1997 | JP. | |
9260369 | Oct., 1997 | JP. | |
10242143 | Sep., 1998 | JP. | |
11251293 | Sep., 1999 | JP. | |
WO 9955526 | Nov., 1999 | JP. | |
2 015 983 | Sep., 1979 | GB | . |
2316535 | Feb., 1998 | GB | . |
WO 99/38202 | Jul., 1999 | WO | . |
WO 99/41423 | Aug., 1999 | WO. |
A comparative study of sub-micron gap filling and planarization techniques; A. Hass Bar-Ilan, N. Gutmann; SPIE; vol. 2636; pp. 277-288. Reactivity of Alkylsilanes and Alkylcarbosilanes in Atomic Hydrogen-Induced Chemical Vapor Deposition; A. M. Wrobel, A. Walkiewicz-Pietrzykowska, and M. Stasiak; J. Electrochem. Soc.; vol. 145, No. 3; Mar. 1998; pp. 1060-1065. Materials Research Society Symposium Proceedings vol. 447; Safe Precursor Gas For Broad Replacement of SiH4 in Plasma Processes Employed in Integrated Circuit Production; M. J. Loboda, J. A. Seifferly, C. M. Grove, and R. F. Schneider; 1997 Materials Research Society; pp. 145-151. Journal of Applied Polymer Science, vol. 66, Plasma Polymerization of Trimethylsilane in Cascade Arc Discharge; Y. S. Lin, H. K. Yasuda; pp. 1653-1665. J. Vac. Sci. Technol. A 12(1), Jan./Feb. 1994; Plasma-enhanced Chemical vapor deposition of a SiC:H films from organosilicon precursors; M. J. Loboda, J. A. Seifferly, and F. C. Dall; pp. 90-96. Handbook of Chemical Vapor Deposition (CVD): principles, technology, and applications; Hugh O. Pierson; 1992; pp. 208-209. Journal of the Ceramic Society of Japan 101; 1993; Thermal Stability of SiNxCy Films Prepared by Plasma CVD; M. Moriyama, T. Ichino, N. Hayashi, and K. Kamata; pp. 757-763. Journal De Physique IV; Colloque C3, supplement au Journal de Physique II, vol. 3, 1993; SiCN coatings prepared by PACVD from TMS-NH3-Ar system on steel; M. Ducarroir, W. Zhang and R. Berjoan; pp. 247-253. Deposition Technologies for Films and Coatings, Developments and Applications; Bunshah et al.; Noyes Publications; 1982; pp. 339-367. 1998 Dumic Conference; Low Dielectric Constant Oxide Films Deposited Using CVD Techniques; S. McClatchie, K. Beekmann, A. Kiermasz; pp. 311-318. The Electrochemical Society, Inc.; Proceedings of the Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films; Proceedings vol. 97-10; Using Trimethylsilane To Improve Safety, Throughput and Versatility In PECVD Processes; Loboda et al.; pp. 443-453. Applied Surface Science 46 (1990); Filling of Si oxide into a deep trench using digital CVD method; Y. Horiike, T. Ichihara and H. Sakaue; pp. 168-174. Liquid Phase Oxidation Employing O Atoms Produced by Microwave Discharge and Si(CH3)4; S. Noguchi, H. Okano, and Y. Horiike; Extended Abstracts of the 19th Conference on Solid State Devices and Materials, Tokyo, 1987, pp. 451-454. Nara, A. et al.: "Low Dielectric Constant Insulator Formed by Downstream Plasma CVD at Room Temperature Using TMS/02", 1996, International Conference on Solid State Devices and Materials (SSDM '96), Yokohama, Japan, Aug. 26-29, 1996, vol. 36, No. 3Bm pp. 1477-1480. Loboda, M. et al.: "Deposition of Low-K Dielectric Films Using Trimethylsilane", Proceedings of the Symposia on Electrochemical Processing In ULSI Fabrication I and Interconnect and Contact Metallization: Materials, Processes, and Reliability, Proceedings of the Symposia on Electrochemical Processing In ULSI Fabrication I and INT, pp. 145-152, 1999. |
TABLE 1 __________________________________________________________________________ Exam- K Growth ple 3MS He N.sub.2 O K (400.degree. C. post Rate Stress* No. (sccm) (sccm) (sccm) (MIM) metal anneal) (.ANG./min) (MPa) __________________________________________________________________________ 1 100 380 120 3.6 3.6 535 61 C 2 100 260 240 3.4 3.1 to 3.4 1531 28 C 3 100 140 360 3.2 2.8-3.0 3615 53 C __________________________________________________________________________ *C = compressive stress
TABLE 2 ______________________________________ K Growth Example 3MS He N.sub.2 O K (post metal Rate No. (sccm) (sccm) (sccm) (MIS) anneal*) (.ANG./min) ______________________________________ 4 100 380 120 3.2 3.1 624 5 100 260 240 3.1 3.0 2076 6 100 140 360 3.1 3.1 4830 7 100 100 400 3.0 2.9 5510 8 100 50 450 3.1 3.0 6076 ______________________________________ *three cycles, one hour soak each, 200350-200.degree. C., 200400-200.degree. C., 200400-200.degree. C.
TABLE 3 ______________________________________ Example Thickness Si H C O Density No. (.mu.m) atom % atom % atom % atom % g/cc ______________________________________ 4 0.62 0.20 0.25 0.37 0.18 1.46 5 0.83 0.18 0.29 0.35 0.18 1.34 6 0.97 0.2 0.3 0.31 0.19 1.36 7 1.10 0.18 0.29 0.33 0.20 1.36 8 1.22 0.18 0.27 0.34 0.21 1.36 ______________________________________
TABLE 4 __________________________________________________________________________ K Growth Example 3MS He O.sub.2 K (400.degree. C. post Rate Stress* No. (sccm) (sccm) (sccm) (MIM) metal anneal) (.ANG./min) (MPa) __________________________________________________________________________ C1 100 440 60 4.6 -- 1456 60 T C2 100 380 120 5.8 -- 2481 71 T __________________________________________________________________________ *T = tensile stress