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United States Patent | 6,153,357 |
Okamoto ,   et al. | November 28, 2000 |
Herein disclosed is an exposure technology for a semiconductor integrated circuit device which has a pattern as fine as that of an exposure wavelength. The technology contemplates to improve the resolution characteristics of the pattern by making use of the mutual interference of exposure luminous fluxes.
Inventors: | Okamoto; Yoshihiko (Ohme, JP); Moriuchi; Noboru (Tokyo, JP) |
Assignee: | Hitachi, Ltd. (Tokyo, JP) |
Appl. No.: | 896139 |
Filed: | July 17, 1997 |
Mar 20, 1990[JP] | 2-071266 | |
May 18, 1990[JP] | 2-126662 | |
Sep 19, 1990[JP] | 2-247100 |
Current U.S. Class: | 430/312; 250/492.2; 257/E21.645; 257/E27.081; 430/311; 430/313; 430/394; 430/396 |
Intern'l Class: | G03F 007/00 |
Field of Search: | 430/394,312,396,311,313 250/492.2 |
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