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United States Patent | 6,140,231 |
Lin ,   et al. | October 31, 2000 |
A new method of forming a stacked tantalum nitride barrier layer to prevent copper diffusion is described. Semiconductor device structures are provided in and on a semiconductor substrate. The semiconductor device structures are covered with an insulating layer. A via is opened through the insulating layer to one of the underlying semiconductor device structures. A stacked mode tantalum nitride barrier layer is conformally deposited within the via. A layer of copper is deposited overlying the stacked mode tantalum nitride barrier layer to complete copper metallization in the fabrication of an integrated circuit device. The stacked mode tantalum nitride barrier layer has misaligned grain boundaries. This prevents diffusion of copper into the dielectric layer.
Inventors: | Lin; Chung-Shi (Hsin-Chu, TW); Shu; Shau-Lin (Hsin-Chu, TW); Yu; Chen-Hua (Hsin-Chu, TW) |
Assignee: | Taiwan Semiconductor Manufacturing Company (Hsin-Chu, TW) |
Appl. No.: | 249257 |
Filed: | February 12, 1999 |
Current U.S. Class: | 438/653; 257/E21.584 |
Intern'l Class: | H01L 021/44 |
Field of Search: | 438/627,628,687,643,653,651,655,657,672,675,644 451/57 |
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