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United States Patent | 6,138,214 |
Pfefferl | October 24, 2000 |
An electronic memory device which includes a memory array having a plurality of memory cells arranged into a plurality of units. Each unit is divided into a first portion including only even addressed memory cells and a second portion including only odd addressed memory cells. A column decoder and row decoder are coupled to the memory array for selecting a number of the plurality of memory cells. A sense amplifier is coupled to the memory array for performing read and write operations from the selected memory cells. An address line is split for application of a split address to said even and odd addressed memory cells.
Inventors: | Pfefferl; Karl Peter (Hohenkirchen, DE) |
Assignee: | Siemens Aktiengesellschaft (Munich, DE) |
Appl. No.: | 994829 |
Filed: | December 19, 1997 |
Current U.S. Class: | 711/137; 711/127; 711/157 |
Intern'l Class: | G06F 012/00 |
Field of Search: | 711/105,118,157,127,137 |
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5781918 | Jul., 1998 | Lieberman et al. | 711/5. |
5829026 | Oct., 1998 | Leung et al. | 711/122. |
5848428 | Dec., 1998 | Collins | 711/127. |
5924111 | Jul., 1999 | Huang et al. | 711/5. |
Foreign Patent Documents | |||
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"A 150-Mhz 4-Bank 64M-bit SDRAM with Address Incrementing Pipeline Scheme," Yukinori Kodama et al., 1994 Symposium on VLSI Circuits Digest of Technical Papers, 1994 IEEE, pp. 81-82. "16Mbit Synchronous DRAM with 125Mbyte/sec Data Rate," Yunho Choi et al., pp. 65-66. |