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United States Patent | 6,124,191 |
Bohr | September 26, 2000 |
Method and apparatus for fabricating contacts to substrate regions through a low k, low density dielectric. A cap is formed over gates and side spacers are formed along the edges of the gates so as to surround the gates in a relatively dense (e.g., silicon dioxide) insulative material. A low k or low density layer of a polymer or silica aerogel or xerogel material is formed in contact with the substrate covering the gate structures including the spacers. An unlanded contact opening is etched through the low k, low density dielectric with an etchant that provides high selectivity between the insulation surrounding the gate and the low k, low density layer.
Inventors: | Bohr; Mark T. (Aloha, OR) |
Assignee: | Intel Corporation (Santa Clara, CA) |
Appl. No.: | 002196 |
Filed: | December 31, 1997 |
Current U.S. Class: | 438/595; 438/303; 438/780 |
Intern'l Class: | H01L 021/476.3 |
Field of Search: | 438/265,287,303,409,494,523,533,586,591,595,634,725,780 |
5627082 | May., 1997 | Beratan et al. | 438/55. |
5923988 | Jul., 1999 | Cheng et al. | 438/305. |
5929441 | Jul., 1999 | Beratan et al. | 250/332. |
5930627 | Jul., 1999 | Zhou et al. | 438/257. |
"Integration of Perfluorocyclobutane (PFCB)", by C.B. Case, C.J. Case, A. Kornblit, M.E. Mills, D. Castillo, R. Liu, Conference Proceedings, ULSI XII.COPYRGT. 1997, Materials Research Society pp. 449-454. "Nanoporous Silica for Dielectric Constant Less than 2", by Ramos, Roderick, Maskara and Smith, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society pp. 455-461. "Porous Xerogel Films as Ultra-Low Permittivity Dielectrics for ULSI Interconnect Applications", by Jin, List, Lee, Lee, Luttmer and Havermann, Conference Proceedings ULSI XII.COPYRGT. 1997, Materials Research Society pp. 463-469. |