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United States Patent | 6,121,539 |
Johnson ,   et al. | September 19, 2000 |
Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. Methods are employed for forming tunnels through lamination and etching. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste. Alternating semiconducting materials may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. A liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporated within the IC package using MLC technology.
Inventors: | Johnson; Gregory M. (Poughkeepsie, NY); Casey; Jon A. (Poughkeepsie, NY); Dwyer; Scott R. (Troy, NY); Long; David C. (Wappingers Falls, NY); Prettyman; Kevin M. (Holmes, NY) |
Assignee: | International Business Machines Corporation (Armonk, NY) |
Appl. No.: | 141481 |
Filed: | August 27, 1998 |
Current U.S. Class: | 136/203; 136/236.1; 136/241; 257/E23.082 |
Intern'l Class: | H01L 035/28 |
Field of Search: | 136/201,203,205,236.1,241 |
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