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United States Patent | 6,107,182 |
Asahina ,   et al. | August 22, 2000 |
A semiconductor device having a contact structure that can exhibit superlative step coverage without causing voids or wiring discontinuities, using aluminum or aluminum alloys as a conductive substance for via-holes. A method of fabricating the semiconductor device comprises, for at least one layer of wiring regions above the first wiring region on a semiconductor substrate, the following steps (a) to (f): (a) a step of forming a via-hole in a second interlayer dielectric formed above the first wiring region on a semiconductor substrate; (b) a degassing step for removing gaseous components included within the interlayer dielectric by a heat treatment under reduced pressure and at the substrate temperature of 300.degree. C. to 550.degree. C.; (c) a step of forming a wetting layer on the surface of the interlayer dielectric and the via-hole; (d) a step of cooling the substrate to a temperature of no more than 100.degree. C.; (e) a step of forming a first aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the wetting layer at a temperature of no more than 200.degree. C.; and (f) a step of forming a second aluminum layer comprising one of aluminum and an alloy in which aluminum is the main component on the first aluminum layer at a temperature of at least 300.degree. C.
Inventors: | Asahina; Michio (Sakata, JP); Takeuchi; Junichi (Chino, JP); Moriya; Naohiro (Chino, JP); Matsumoto; Kazuki (Chino, JP) |
Assignee: | Seiko Epson Corporation (Tokyo, JP) |
Appl. No.: | 161920 |
Filed: | September 29, 1998 |
Oct 02, 1997[JP] | 9-286036 | |
Mar 03, 1998[JP] | 10-067868 | |
Sep 09, 1998[JP] | 10-272612 |
Current U.S. Class: | 438/618; 257/E21.165; 257/E21.576; 257/E21.577; 257/E21.584; 257/E21.585; 438/622; 438/652; 438/688 |
Intern'l Class: | H01L 021/28 |
Field of Search: | 438/618,396,387,272,238,239,243,622,652,608 |
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5471418 | Nov., 1995 | Tanigawa | 365/149. |
5696017 | Dec., 1997 | Ueno | 437/60. |
5858837 | Jan., 1999 | Sakoh et al. | 438/255. |
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8-203896 | Aug., 1996 | JP. | |
11-17004 | Jan., 1999 | JP. |