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United States Patent | 6,093,948 |
Zambrano ,   et al. | July 25, 2000 |
The process provides first for the accomplishment of low-doping body regions at the sides and under a gate region and then the accomplishment of high-doping body regions inside said low-doping body regions and self-aligned with said gate region. There is thus obtained an MOS power transistor with vertical current flow which has high-doping body regions self-aligned with said gate region and with a reduced junction depth.
Inventors: | Zambrano; Raffaele (Mercato san Severino, IT); Magro; Carmelo (Catania, IT) |
Assignee: | Consorzio per la Ricerca Sulle Microelettronica nel Mezzogiorno (IT); STMicroelectronics, s.r.l. (IT) |
Appl. No.: | 286638 |
Filed: | August 5, 1994 |
Oct 16, 1990[EP] | 90830462 |
Current U.S. Class: | 257/339; 257/335; 257/336; 257/401; 257/E21.418; 257/E29.066; 257/E29.257 |
Intern'l Class: | H01L 029/76 |
Field of Search: | 257/401,335,336,337,338,339,340,341,327,346,342,344,142,144 |
4345265 | Aug., 1982 | Blanchard | 257/336. |
4587713 | May., 1986 | Goodman et al. | 257/335. |
4672407 | Jun., 1987 | Nakagawa et al. | 257/142. |
4803532 | Feb., 1989 | Mihara | 257/335. |
4860072 | Aug., 1989 | Zommer | 257/144. |
4974059 | Nov., 1990 | Kinzer | 257/342. |
5057884 | Oct., 1991 | Suzuki et al. | 257/144. |
5160985 | Nov., 1992 | Akiyama | 257/145. |
5198688 | Mar., 1993 | Tsuchiya et al. | 257/144. |
Foreign Patent Documents | |||
000387722 | Sep., 1990 | EP | 257/335. |
S.M. Sze; "Semiconductor Devices Physics and Technology"; 1985; pp 110-111. |