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United States Patent | 6,093,652 |
Pan ,   et al. | July 25, 2000 |
In one aspect, the invention includes a method of forming an insulative plug within a substrate, comprising: a) forming a masking layer over the substrate, the masking layer having an opening extending therethrough to expose a portion of the underlying substrate; b) etching the exposed portion of the underlying substrate to form an opening extending into the substrate; c) forming an insulative material within the opening in the substrate, the insulative material within the opening forming an insulative plug within the substrate; d) after forming the insulative material within the opening, removing the masking layer; and e) after removing the masking layer, removing a portion of the substrate to lower an upper surface of the substrate relative to the insulative plug.
Inventors: | Pan; Pai-Hung (Boise, ID); Lee; Whonchee (Boise, ID) |
Assignee: | Micron Technology, Inc. (Boise, ID) |
Appl. No.: | 146765 |
Filed: | September 3, 1998 |
Current U.S. Class: | 438/692; 257/E21.546; 438/753; 438/756 |
Intern'l Class: | H01L 021/00 |
Field of Search: | 438/691,692,693,697,723,724,743,744,745,747,753,756,757 216/37,79,88,89,99,109 |
5244534 | Sep., 1993 | Yu et al. | 438/692. |
5272117 | Dec., 1993 | Roth et al. | |
5858858 | Jan., 1999 | Park et al. | 438/743. |