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United States Patent | 6,051,502 |
Frankamp ,   et al. | April 18, 2000 |
The invention encompasses methods of forming conductive components and methods of forming conductive lines. In one aspect, the invention includes a method of forming a conductive component comprising: a) anisotropically etching a conductive material into a conductive component shape having at least one sidewall, and forming an etch blocking layer over the sidewall during the anisotropic etching; and b) removing the etch blocking layer with an etchant comprising fluorine and a noble element. In another aspect, the invention includes a method of forming a conductive line comprising: a) forming a layer of conductive material; b) forming a masking layer over a portion of the layer of conductive material in the shape of a conductive line; c) anisotropically etching the conductive material with the masking layer in place to form a conductive line beneath the masking layer, the conductive line having sidewalls, a blocking layer forming over the sidewalls during the anisotropic etching; and d) removing the blocking layer with an etchant comprising fluorine and a noble element.
Inventors: | Frankamp; Harlan H. (Meridian, ID); Blalock; Guy T. (Boise, ID) |
Assignee: | Micron Technology, Inc. (Boise, ID) |
Appl. No.: | 953910 |
Filed: | October 20, 1997 |
Current U.S. Class: | 438/696; 257/E21.313; 438/720; 438/725; 438/733 |
Intern'l Class: | H01L 021/311; H01L 021/302 |
Field of Search: | 438/696,720,733,725 |
4992137 | Feb., 1991 | Cathey et al. | |
5228950 | Jul., 1993 | Webb et al. | 156/643. |
5231051 | Jul., 1993 | Baldi et al. | 438/743. |
5272117 | Dec., 1993 | Roth et al. | 437/228. |
5314578 | May., 1994 | Cathey | 438/695. |
5316980 | May., 1994 | Takeshiro | 438/697. |
5407862 | Apr., 1995 | Miyamoto | 437/192. |
5413670 | May., 1995 | Langan et al. | |
5419805 | May., 1995 | Jolly | 437/200. |
5798303 | Aug., 1998 | Clampitt | 438/696. |
Foreign Patent Documents | |||
0 662 705 | Jul., 1995 | EP. |
Abstract: 94-014129, "Natural Poly: Vitamin Concentrate for Human or Animal Food Supplement", 1992, 1 pg. Abstract: 201, "After Corrosion Treatment in Aluminum Alloy Reactive Ion Etching", vol. 83, No. 1 of Extended Abstracts, May 1983, p. 327. Baklanov, M., "Protective Films Formed by RIE of Co and Ti Silicides and Ways of their Removal", Proceedings of the 3rd Internatl. Symposium on Ultra Clean Processing of Silicon Surfaces, Sep. 1996, pp. 171-174. Wolf, Anisotropic Etching and Control of Edge Profile, Dry Etching for VLSI Fabrication, vol. 1, pp. 551-555, no date. Chia-Cheng Cheng, et al., A Downstream Plasma Process for Post-Etch Residue Cleaning, Semiconductor International, pp. 185-188 (Jul., 1995). S. Jimbo, et al., Resist and Sidewall Film Removal After A1 Reactive Ion Etching (RIE), Jpn. J. Appl. Phys. vol. 32 (Jun. 1993). "Metal Etch System," Product Builletin, Tegal Corporation, 1995. |