Back to EveryPatent.com
United States Patent | 6,043,516 |
Schulze | March 28, 2000 |
A semiconductor component has a semiconductor body with at least one integrated lateral resistor. The lateral resistor is formed with a dopant concentration in the resistor region. The resistor region is located in a region which is accessible from the surface of the semi-conductor component and it has a defined dopant concentration. Scattering centers are provided in the region of the lateral resistor which reduce a temperature dependency of the lateral resistor.
Inventors: | Schulze; Hans-Joachim (Ottobrunn, DE) |
Assignee: | Eupec Europaeische Gesellschaft fuer Leistungshalbleiter mbH & Co. KG (Warstein-Belecke, DE) |
Appl. No.: | 940471 |
Filed: | September 30, 1997 |
Sep 30, 1996[DE] | 196 40 311 |
Current U.S. Class: | 257/174; 257/107; 257/148; 257/154; 257/157; 257/162; 257/173; 257/536; 257/617; 257/E29.218; 257/E29.223; 257/E29.326 |
Intern'l Class: | H01L 029/74; H01L 029/04; H01L 029/30 |
Field of Search: | 257/174,173,148,107,131,154,157,162,536,537,538,543,617 |
3902926 | Sep., 1975 | Perloff et al. | 148/1. |
4040170 | Aug., 1977 | Schlegel et al. | 29/577. |
4117505 | Sep., 1978 | Nakata | 357/28. |
4210464 | Jul., 1980 | Tanaka et al. | 148/1. |
4224083 | Sep., 1980 | Cresswell | 148/1. |
4234355 | Nov., 1980 | Meinders | 148/1. |
4908687 | Mar., 1990 | Temple | 357/38. |
4969028 | Nov., 1990 | Baliga | 357/38. |
5243205 | Sep., 1993 | Kitagawa et al. | 257/173. |
5587594 | Dec., 1996 | Jacklin et al. | 257/138. |
Foreign Patent Documents | |||
0 389 863 B1 | Oct., 1990 | EP. | |
0472880A2 | Mar., 1992 | EP. | |
3913123A1 | Oct., 1990 | DE. | |
2207552A | Feb., 1989 | GB. |
"Advanced Light Triggered Thyristors for Electric Power Systems" (Temple), EE Int. Conference Thyristor and Variable Static Equipment for AC and DC Transmission, Nov. 30, 1981, pp. 86-91. |