Back to EveryPatent.com
United States Patent | 6,040,627 |
Harada ,   et al. | March 21, 2000 |
A semiconductor device is formed with interconnections having reduced electric resistance. The semiconductor device comprises an upper wiring formed on an insulating film with a barrier metal therebetween, a conductive plug formed in a plugging space of the insulating film and electrically connected to the upper wiring at an opening of the plugging space, and a sidewall formed on a side surface of the upper wiring, the bottom of the sidewall covering the opening of the plugging space not covered by the upper wiring.
Inventors: | Harada; Akihiko (Tokyo, JP); Higashitani; Keiichi (Tokyo, JP) |
Assignee: | Mitsubishi Denki Kabushiki Kaisha (Tokyo, JP) |
Appl. No.: | 059702 |
Filed: | April 14, 1998 |
Current U.S. Class: | 257/752; 257/750; 257/751; 257/758; 257/774; 257/E21.582; 257/E23.145; 257/E23.16 |
Intern'l Class: | H01L 023/48; H01L 023/52; H01L 029/40 |
Field of Search: | 257/750,751,752,758,774 438/627,629,653 |
5061646 | Oct., 1991 | Sivan et al. | 438/626. |
5243220 | Sep., 1993 | Shibata et al. | 257/748. |
5371410 | Dec., 1994 | Chen et al. | 257/750. |
5545590 | Aug., 1996 | Licata | 438/626. |
5652182 | Jul., 1997 | Cleeves | 438/626. |
5656543 | Aug., 1997 | Chung | 438/625. |
5872053 | Feb., 1999 | Smith | 438/626. |
Foreign Patent Documents | |||
7-335757 | Dec., 1995 | JP. | |
8-236476 | Sep., 1996 | JP. |