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United States Patent | 5,736,770 |
Asai ,   et al. | April 7, 1998 |
A semiconductor device comprising: a semiconductor substrate; a diffused region extending from the surface and to the inside of the semiconductor substrate; a first insulating layer formed on the semiconductor substrate and having a contact hole located through which the diffused region is exposed; a first conductor layer formed on a portion of the first insulating layer and connected so the diffused region through the first contact hole; and an insulator section made of an oxide of the substance of the first conductor layer and formed on another portion of the first insulating layer to surround the first conductor layer.
Inventors: | Asai; Akiyoshi (Aichi, JP); Ohya; Nobuyuki (Kariya, JP); Katada; Mitsutaka (Kariya, JP) |
Assignee: | Nippondenso Co., Ltd. (Kariya, JP) |
Appl. No.: | 248002 |
Filed: | May 24, 1994 |
May 25, 1993[JP] | 5-122757 |
Current U.S. Class: | 257/382; 257/377; 257/384; 257/508; 257/641; 257/649; 257/754; 257/755; 257/759; 257/760; 257/E21.59; 257/E21.641; 257/E29.122 |
Intern'l Class: | H01L 029/78; H01L 023/48; H01L 027/02; H01L 029/34 |
Field of Search: | 257/382,384,377,508,751,754,755,758,760,767,649,640,641 |
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4873557 | Oct., 1989 | Kita | 257/384. |
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5164814 | Nov., 1992 | Okumura | 257/758. |
5182619 | Jan., 1993 | Pfiester | 257/382. |
5198378 | Mar., 1993 | Rodder et al. | 257/384. |
5241203 | Aug., 1993 | Hsu et al. | 257/382. |
5296729 | Mar., 1994 | Yamanaka et al. | 257/382. |
5384485 | Jan., 1995 | Nishida et al. | 257/382. |
5396094 | Mar., 1995 | Matsuo | 257/767. |
5500558 | Mar., 1996 | Hayashide | 257/758. |
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