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United States Patent | 5,736,750 |
Yamazaki ,   et al. | April 7, 1998 |
The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalent high-intensity light is radiated from above to accomplish activation.
Inventors: | Yamazaki; Shunpei (Tokyo, JP); Takemura; Yasuhiko (Kanagawa, JP) |
Assignee: | Semiconductor Energy Laboratory Co., Ltd. (Kanagawa-ken, JP) |
Appl. No.: | 654052 |
Filed: | May 28, 1996 |
Jan 18, 1993[JP] | 5-23286 | |
Jan 18, 1993[JP] | 5-23288 |
Current U.S. Class: | 257/59; 257/346; 257/392; 257/411; 257/E21.413; 257/E21.703 |
Intern'l Class: | H01L 027/02; H01L 029/04 |
Field of Search: | 257/774,300,57,66,410,316,59,61,346,347,350,411,392 |
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