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United States Patent | 5,640,043 |
Eng ,   et al. | June 17, 1997 |
A high voltage silicon rectifier includes a substrate portion and an epitaxial mesa portion that is a frustrum of a pyramid with a substantially square cross section and side walls that make a forty five degree angle with the substrate portion. The mesa portion includes three germanium doped layers that introduce strain to speed up recombination of charge carriers. The topography of the base region of the rectifier has a high-low junction that includes a central portion that is deeper in the mesa than the germanium-doped layers and an edge portion that is shallower in the mesa than the germanium-doped layers and forms a positive bevel angle with the tapered side walls of the mesa,
Inventors: | Eng; Jack (Cork City, IE); Chan; Joseph (Kings Park, NY); Laterza; Lawrence (Miller Place, NY); Zakaluk; Gregory (Seaford, NY); Wu; Jun (Flushing, NY); Amato; John (Northport, NY); Garbis; Dennis (Huntington Station, NY); Einthoven; Willem (Belle Mead, NJ) |
Assignee: | General Instrument Corporation of Delaware (Hatboro, PA) |
Appl. No.: | 580071 |
Filed: | December 20, 1995 |
Current U.S. Class: | 257/624; 257/590; 257/593; 257/623; 257/E29.085; 257/E29.329 |
Intern'l Class: | H01L 029/06; H01L 027/082 |
Field of Search: | 257/618,623,624,590,593 |
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4255757 | Mar., 1981 | Hikin | 257/623. |
4740477 | Apr., 1988 | Einthoven et al. | 437/8. |
5010023 | Apr., 1991 | Einthoven | 437/8. |
5097308 | Mar., 1992 | Salih | 357/34. |
5102810 | Apr., 1992 | Salih | 437/31. |
5298457 | Mar., 1994 | Einthoven et al. | 437/131. |
5342805 | Aug., 1994 | Chan | 117/89. |