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United States Patent | 5,594,683 |
Chen ,   et al. | January 14, 1997 |
This invention presents a new SRAM cell comprising only two MOSFETs: one is the access device for data transfer; and the other is operated as a high gain gated lateral BJT in the reverse base current mode so as to constitute the role of the storage flip-flop or latch. This invention also requires only one-sided peripheral circuitry for Read/Write function. Thus the chip area is greatly saved. In addition, the invention is fully compatible with the existing low-cost, high-yield standard CMOS process.
Inventors: | Chen; Ming-Jer (Department of Electronics Engineering & Institute of Electronics, National, Hsin-Chu, TW); Huang; Tzuen-Hsi (Department of Electronics Engineering & Institute of Electronics, National, Hsin-Chu, TW) |
Appl. No.: | 418485 |
Filed: | April 7, 1995 |
Current U.S. Class: | 365/177; 257/273; 257/903; 257/E27.098; 365/174; 365/182 |
Intern'l Class: | G11C 011/34 |
Field of Search: | 257/132,133,138,139,146,147,346,356,273,903,577,578 365/150,174,177,186,187,188,182 |
5060194 | Oct., 1991 | Sakui et al. | 365/177. |
5422841 | Jul., 1995 | Nakayama | 365/225. |
K. Sakui et al., "A new static memory cell based on reverse base current (RBC) effect of bipolar transistor," IEEE IEDM Tech. Dig., pp. 44-47 Dec. 1988. T. H. Huang et al., "Base current reversal phenomenon in a CMOS compatible high gain n-p-n gated lateral bipolar transistor," IEEE Trans. Electron Devices, vol. 42, No. 2, pp. 321-327 Feb. 1995. |