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United States Patent |
5,353,323
|
Hirokawa
,   et al.
|
October 4, 1994
|
X-ray exposure apparatus
Abstract
Disclosed is an X-ray exposure apparatus comprising a chamber, filled with
X-ray low attenuation gas for guiding X-rays, generated from an X-ray
source, to an X-ray window, a gas supplying portion, provided to supply
X-ray low attenuation gas into the chamber and having a portion with a
small-diameter passage cross section formed at least at a part thereof, a
gas discharging portion, provided to discharge gas from the chamber and
having a portion with a small-diameter passage cross section formed at
least at a part thereof, and a flow-rate controller for controlling a flow
rate of the gas to be supplied to the gas supplying portion to thereby
control pressure in the chamber, whereby pressure in the chamber is made
equal to or slightly higher than atmospheric pressure by setting the
small-diameter portion of the gas supplying portion smaller than that of
the gas discharging portion.
Inventors:
|
Hirokawa; Toshio (Kawasaki, JP);
Uchida; Norio (Yokohama, JP)
|
Assignee:
|
Kabushiki Kaisha Toshiba (Kawasaki, JP)
|
Appl. No.:
|
190531 |
Filed:
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February 2, 1994 |
Current U.S. Class: |
378/34; 378/35 |
Intern'l Class: |
G21K 005/00 |
Field of Search: |
378/34,35
|
References Cited
U.S. Patent Documents
5172403 | Dec., 1992 | Tanaka et al. | 378/34.
|
5267292 | Nov., 1993 | Tanaka et al. | 378/34.
|
Foreign Patent Documents |
1-181518 | Jul., 1989 | JP.
| |
Other References
S. Ishihara, et al., J. Vac. Sci. Technol. B 7(6), Nov./Dec. 1989, pp.
1652-1656, "A Vertical Stepper for Synchrotron X-Ray Lithography."
|
Primary Examiner: Porta; David P.
Assistant Examiner: Wong; Don
Attorney, Agent or Firm: Oblon, Spivak, McClelland, Maier & Neustadt
Claims
What is claimed is:
1. An X-ray exposure apparatus comprising:
X-ray generating means for generating X-rays;
a main chamber having an X-ray window for passing said X-rays and an X-ray
mask attached thereto facing said X-ray window, and filled with X-ray low
attenuation gas, for guiding said X-rays from said X-ray window to said
X-ray mask;
gas supplying means for supplying X-ray low attenuation gas into said main
chamber and having a portion with a small-diameter passage cross section
formed at least at a part thereof;
gas discharging means for discharging gas from said main chamber and having
a portion with a small-diameter passage cross section formed at least at a
part thereof; and
flow-rate control means for controlling a flow rate of gas to be supplied
to said gas supplying means to thereby control pressure in said main
chamber, and
wherein a diameter of said small-diameter portion of said gas supplying
means is set at a value smaller than that of said gas discharging means so
that pressure in said main chamber is substantially equal atmospheric
pressure.
2. The X-ray exposure apparatus according to claim 1, wherein said gas
supplying means includes a pressure control chamber whose internal
pressure is controllable and a restrictor provided between said pressure
control chamber and said main chamber and having an orifice of a
predetermined diameter, and said gas discharging means has a gas
discharging passage connected to said main chamber and wider than said
diameter of said orifice.
3. The X-ray exposure apparatus according to claim 2, wherein said gas
supplying means has a differential pressure gauge attached to said
pressure control chamber for measuring a difference between pressure in
said pressure control chamber and atmospheric pressure, and flow-rate
control means for controlling a flow rate of gas to be supplied to said
pressure control chamber, based on a signal output from said differential
pressure gauge.
4. The X-ray exposure apparatus according to claim 1, wherein said gas
supplying means has a pipe coupled to said main chamber to supply said gas
thereto and narrower than said small-diameter portion of said gas
discharging means.
5. The X-ray exposure apparatus according to claim 1, wherein said gas
discharging means has a pipe connected to said main chamber and a shield
valve provided between said pipe and said main chamber for closing said
pipe.
6. The X-ray exposure apparatus according to claim 1, wherein said gas
discharging means has a pipe connected to said main chamber and an oxygen
analyzer for measuring an amount of oxygen in said pipe.
7. The X-ray exposure apparatus according to claim 1, wherein said gas
discharging means has a pipe connected to said main chamber, and an outer
tube provided around said pipe, with a gas retainer formed between said
pipe and said outer tube.
8. The X-ray exposure apparatus according to claim 1, wherein said gas
supplying means has a gas tank and a pipe for coupling said gas tank to
said gas retainer.
9. The X-ray exposure apparatus according to claim 1, wherein said gas
supplying means has bypass means for supplying a large amount of gas in
said main chamber at a time of activating said X-ray exposure apparatus.
10. The X-ray exposure apparatus according to claim 1, wherein said gas
discharging means has a pipe connected to a vicinity of a bottom portion
off said main chamber, and having a gas outlet port extending upward and
then bent to be open downward.
11. An X-ray exposure apparatus comprising:
X-ray generating means for generating X-rays;
a main chamber having an X-ray window for passing said X-rays and an X-ray
mask attached thereto facing said X-ray window, and filled with X-ray low
attenuation gas for guiding said X-rays from said X-ray window to said
X-ray mask;
gas supplying means for supplying X-ray low attenuation gas into said main
chamber and having a first portion with a small-diameter passage cross
section formed at least at a part thereof:
gas discharging means for discharging gas from said main chamber and having
a second portion with a small-diameter passage across section formed at
least at a part thereof, said second portion of said gas discharging means
having a larger passage cross section than said first portion; and
flow-rate control means for controlling a flow rate of gas to be supplied
to said gas supplying means to thereby control pressure in said main
chamber.
12. The X-ray exposure apparatus according to claim 11, wherein said gas
supplying means includes a pressure control chamber whose internal
pressure is controllable and a restrictor disposed between said pressure
control chamber and said main chamber and having an orifice of a
predetermined diameter, and said gas discharging means has a gas
discharging passage connected to said main chamber and having a larger
diameter than said diameter of said orifice.
Description
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an X-ray exposure apparatus which exposes
a semiconductor wafer or the like using X-rays that are generated by the
radiation of a synchrotron (SOR) or electron-ray excitation, or X-rays
that are generated by plasma or the like.
2. Description of the Related Art
Recent semiconductor devices are designed with higher integration so that
the minimum line width of the pattern of a VLSI (Very Large Scale
Integration) circuit reaches the order of submicrons. Exposure
apparatuses, which are used in fabricating VLSI devices, expose a
semiconductor wafer or the like using X-rays that are generated by the
radiation of a synchrotron (SOR) or electron-ray excitation, or X-rays
that are generated by plasma or the like.
Such an X-ray exposure apparatus is designed in such a way that X-rays,
which are generated from an X-ray source placed in vacuum and are led into
a chamber filled with gaseous helium through a window formed by a
beryllium foil, transfers a mask pattern on a wafer, placed in the air,
through an X-ray mask.
Since the attenuation of X-rays is significant in this X-ray exposure
apparatus, it is necessary to keep the low-attenuation atmosphere for
X-rays (helium atmosphere) at high purity. As the X-ray mask are very
thin, the difference between the pressure in the chamber and the
atmospheric pressure should be controlled at high precision in order to
prevent those members from being deformed or damaged.
A helium chamber for an X-ray exposure apparatus, as disclosed in Jpn. Pat.
Appln. KOKAI Publication No. 1-181518 and Jpn. Pat. Appln. KOKAI
Publication No. 1-181521, has been proposed as one conventional technique
of controlling the chamber pressure.
In this conventional technique, the difference between the chamber pressure
and atmospheric pressure can be controlled to about +3 mmH.sub.2 O or +0.2
mmHg due to the difference in specific weight between H.sub.2 O and Hg
being 1:13.6). However, the present inventors have conducted various
experiments and simulation and found that with the difference between the
chamber pressure and atmospheric pressure being 0.2 mmHg, a typical X-ray
mask, e.g., an X-ray mask having a membrane thickness of 1 .mu.m and a
size of about 25 mm on each side, causes deformation of about 15 .mu.m. In
the X-ray exposure apparatus, it is considered to perform a close exposure
with the gap between the mask and the wafer being set to about 30 .mu.m.
If the mask deforms 15 .mu.m for the 30-.mu.m gap, accurate exposure will
not be accomplished.
In a pressure control of about 0.2 mmHg, as described above, since the
amount of mask deformation is too large, an accurate exposure cannot be
realized. For this reason, finer control on the pressure difference is
demanded.
Also, in a case of monitoring oxygen concentration, if the oxygen
concentration in the chamber is measured by an oxygen monitor with a
suction pump for sucking sample gas, the pressure in the chamber varies.
For this reason, it is difficult to satisfy the above demand for the
pressure control.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to provide an X-ray
exposure apparatus which will control the pressure in a chamber at high
precision.
It is another object of the present invention to provide an X-ray exposure
apparatus which will substantially eliminate the difference between the
chamber pressure and atmospheric pressure.
To achieve the foregoing objects, according to one aspect of this
invention, there is provided an X-ray exposure apparatus comprising a
chamber, filled with an x-ray low attenuation gas, for guiding X-rays,
generated from an X-ray source, to an X-ray window; a gas supplying
portion, provided to supply an X-ray low attenuation gas into the chamber
and having a portion with a small-diameter passage cross section formed at
least at a part thereof; a gas discharging portion, provided to discharge
gas from the chamber and having a portion with a small-diameter passage
cross section formed at least at a part thereof; and flow-rate control
means for controlling a flow rate of the gas to be supplied to the gas
supplying portion to thereby control pressure in the chamber, whereby
pressure in the chamber is made equal to or slightly higher than
atmospheric pressure by setting the small-diameter portion of the gas
supplying portion smaller than that of the gas discharging portion.
According to another aspect of this invention, there is provided an X-ray
exposure apparatus comprising a chamber, for guiding X-rays, generated
from an X-ray source, to an X-ray attenuation atmosphere from an X-ray
window to a mask; a gas supplying portion for supplying an X-ray low
attenuation gas into the chamber; and a gas discharging portion, provided
to discharge gas from the chamber and having a gas outlet port formed at
substantially the same height as a mask for making pressure in the chamber
substantially equal to atmospheric pressure.
Additional objects and advantages of the invention will be set forth in the
description which follows, and in part will be obvious from the
description, or may be learned by practice of the invention. The objects
and advantages of the invention may be realized and obtained by means of
the instrumentalities and combinations particularly pointed out in the
appended claims.
BRIEF DESCRIPTION OF THE DRAWINGS
The accompanying drawings, which are incorporated in and constitute a part
of the specification, illustrate presently preferred embodiments of the
invention, and together with the general description given above and the
detailed description of the preferred embodiments given below, serve to
explain the principles of the invention.
FIG. 1 is a diagram of one embodiment of the present invention,
illustrating the schematic structure of an X-ray exposure apparatus having
a gas supplying portion with a small-diameter portion formed at a part
thereof and a gas discharging portion;
FIG. 2 is a diagram showing the schematic structure of an X-ray exposure
apparatus having a small-diameter gas supplying portion according to
another embodiment of this invention;
FIG. 3 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a different embodiment
of this invention;
FIG. 4 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a still different
embodiment of this invention;
FIG. 5 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a further embodiment of
this invention;
FIG. 6 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a still further
embodiment of this invention;
FIG. 7 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a yet still further
embodiment of this invention;
FIG. 8 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a yet still further
embodiment of this invention;
FIG. 9 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a yet still further
embodiment of this invention;
FIG. 10 is a diagram for explaining the relation among chamber pressure,
atmospheric pressure and pressure at the outlet port;
FIG. 11 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a yet still further
embodiment of this invention; and
FIG. 12 is a diagram illustrating the schematic structure of an X-ray
exposure apparatus having a gas discharging portion with an outlet port
located at the same height as a mask according to a yet still further
embodiment of this invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS
According to an embodiment shown in FIG. 1, an X-ray window (beryllium
foil) 2 is provided between a vacuum chamber 1 where X-rays emitted from
an X-ray source XS enter, and a chamber 3. The chamber 3 is filled with
high-purity gaseous helium to provide an X-ray low attenuation atmosphere.
An X-ray mask 4 having a pattern of an LSI circuit or the like drawn
thereon is disposed between the chamber 3 and the air, facing the X-ray
window 2. A wafer 5 for example is placed in the air, opposite to the
X-ray mask 4. Provided above the chamber 3 is a gas supplying portion 6
for guiding gaseous helium inside the chamber 3. Provided below the bottom
portion of the chamber 3 is a gas discharging portion 7 for discharging
gaseous helium out of the chamber 3.
The gas supplying portion 6 has a pressure control chamber 8 having a
relatively large volume and a restrictor 6c, which is provided in a pipe
6b for connecting this pressure control chamber 8 to the chamber 3. The
restrictor 6c has an orifice 6a having a smaller diameter a than that of
the pipe 6b. Provided above the pressure control chamber 8 is a
differential pressure gauge 9 which measures the difference between
pressure in the pressure control chamber 8 and atmospheric pressure. A
helium tank 14 is connected to the side of the pressure control chamber 8
via a flow-rate control valve 10, which may be an electromagnetic valve.
The flow-rate control valve 10 is connected to a pressure controller 11.
The pressure controller 11 is connected to the differential pressure gauge
9, and controls the flow-rate control valve 10 based on the output signal
of the differential pressure gauge 9 to adjust the flow rate of the
gaseous helium to be supplied to the pressure control chamber 8.
The gas discharging portion 7, connected to the chamber 3, has a restrictor
7a having a larger diameter b than the diameter a of the orifice 6a (i.e.,
a<b), an oxygen analyzer 12, a shield valve 13, a lead pipe 7c extending
downward of the restrictor 7a, and an opening (outlet port) 7b open to the
air. The shield valve 13 and oxygen analyzer 12 are located upstream of
the restrictor 7a.
The operation of the thus structured X-ray exposure apparatus will be
described below.
The X-ray source XS is activated to emit X-rays in the vacuum chamber 1.
The X-rays pass through the X-ray window 2, the X-ray low attenuation
atmosphere of the chamber 3 and the mask 4 to transfer the LSI pattern of
the mask 4 on the wafer 5. At this time, the differential pressure gauge 9
measures the difference between the pressure in the pressure control
chamber 8 and atmospheric pressure and inputs the pressure difference
signal to the pressure controller 11. The pressure controller 11 controls
the opening of the flow-rate control valve 10 in accordance with the
pressure difference signal. Accordingly, some amount Q of gaseous helium
is supplied via the flow-rate control valve 10 to the pressure control
chamber 8 from the helium tank 14.
In this case, if the pressure in the pressure control chamber 8 is
controlled to be P.sub.0, the pressure P.sub.1 in the chamber 3 will be
expressed by the following equation.
P.sub.1 .apprxeq.P.sub.0 (a/b).sup.4
where a is the diameter of the orifice 6a and b is the diameter of the
restrictor 7a.
Thus, if P.sub.0 =1 mmHg, a=1 mm and b=10 mm, it is apparent from the above
equation that the minute pressure difference of 1/10000 mmHg (10.sup.-4
mmHg) is attained between the pressure P.sub.1 in the chamber 3 and the
atmospheric pressure.
With a typical X-ray mask (membrane thickness of 1 .mu.m and a size of 25
mm on each side), if the pressure difference between the pressure P.sub.1
in the chamber 3 and the atmospheric pressure is set to about 1/1000 mmHg
(10.sup.-3 mmHg), the amount of deformation of the mask will be suppressed
to about 0.5 .mu.m. Even with the use of an X-ray mask that is easy to
deform, the amount of deformation will be suppressed to about 1 to 2 .mu.m
for that pressure difference. If the pressure P.sub.1 in the chamber 3 is
set slightly higher than the atmospheric pressure by about 1/10000 mmHg,
therefore, the amount of deformation of the X-ray mask 4 can be suppressed
significantly, thus ensuring adequate exposure at a sufficiently high
accuracy even in the case of close exposure with the gap of about 30 .mu.m
set between the mask 4 and the wafer 5.
The place in the X-ray exposure apparatus where one wants to measure the
oxygen concentration is inside the chamber 3 where the purity of helium
should be concerned. If the oxygen analyzer 12 is provided at the gas
discharging portion 7 for gaseous helium as in the above-described
embodiment, the oxygen concentration in the chamber 3 would always be
monitored without directly measuring that oxygen concentration and no pump
is needed to suck sample gas. In other words, as the chamber 3 has no
portion open to the air except the gas discharging portion 7, it is
assured that the oxygen concentration in the chamber 3 located upstream of
the gas discharging portion 7 will be equal to or lower than the oxygen
concentration at the gas discharging portion 7, if the oxygen
concentration is measured at the outlet port of the gas discharging
portion 7.
The most probable cause for an increase in oxygen concentration in the
chamber 3 is the diffusion of oxygen near the gas discharging portion 7,
which is prevented by the lead pipe 7c located between the restrictor 7a
and the opening 7b in the above embodiment.
when no gaseous helium flows when the apparatus is activated or
deactivated, the shield valve 13 can shield the inside of the chamber 3.
Although the pressure control chamber 8 is provided in the above
embodiment, it may be replaced with a pipe 16 as shown in FIG. 2. Although
the pressure control chamber 8 needs a certain volume to provide uniform
pressure, it may be replaced with a simple pipe 16. In this case, when the
diameter of the pipe 16 is larger than the diameter a of the orifice 6a,
it is necessary to form a restrictor corresponding to the orifice 6a as
shown in FIG. 2. If the diameter a of the orifice 6a is equal to that of
the pipe 16, the pipe 16 alone will accomplish the same function as the
orifice 6a in the embodiment in FIG. 1. This eliminates the need for
separately providing the orifice 6a to the pipe 16, thus simplifying the
structure.
Another embodiment will now be described referring to FIG. 3.
While the X-ray source XS, vacuum chamber 1 and X-ray window (beryllium
foil) 2 are not shown in FIG. 3 for the sake of convenience, the
structures and arrangement of those members are the same as those of the
first embodiment. In the diagram, as per the previous embodiment, the
chamber 3 is filled with highly pure gaseous helium to provide an X-ray
low attenuation atmosphere. An X-ray mask 4 having a pattern of an LSI
circuit or the like drawn thereon is disposed between the chamber 3 and
the air, facing the X-ray window 2. A wafer 5 for example is placed in the
air, opposite to the X-ray mask 4. Provided above the chamber 3 is a gas
supplying portion 6 for guiding gaseous helium inside the chamber 3.
Provided at the side of the bottom portion of the chamber 3 is a gas
discharging portion 7 for discharging gaseous helium out of the chamber 3.
The gas supplying portion 6 has a pressure control chamber 8 having a
relatively large volume and a pipe 6b, which connects this pressure
control chamber 8 to the chamber 3. Provided above the pressure control
chamber 8 is a differential pressure gauge 9 which measures the difference
between pressure in the pressure control chamber 8 and atmospheric
pressure. A helium tank 14 is connected to the side of the pressure
control chamber 8 via a flow-rate control valve 10, which may be an
electromagnetic valve. The flow-rate control valve 10 is connected to a
pressure controller 11. The pressure controller 11 is connected to the
differential pressure gauge 9, and controls the flow-rate control valve 10
based on the output signal of the differential pressure gauge 9 to adjust
the flow rate of the gaseous helium to be supplied to the pressure control
chamber 8.
The gas discharging portion 7, connected to the side of the bottom portion
of the chamber 3, has a pipe 7c extending upward from the bottom portion.
This pipe 7a has an upward opening (outlet port) 7b formed at the same
height as the height h from the bottom of the chamber 3 to nearly the
center of the mask 4. A shield valve 13 is provided where the pipe 7c is
connected to the chamber 3. An oxygen analyzer 12 is attached to the pipe
7 near the opening 7b.
In the X-ray exposure apparatus having the above structure, if the
atmospheric pressure is P.sub.0, the pressure in the chamber 3 is P.sub.1
and the difference between the height of the mask 4 and that of the
opening 7b is .DELTA.h (cm), the pressure difference that occurs due to
the height difference will be given by the following equation.
P.sub.1 -P.sub.0 =(.gamma..sub.air -.gamma.He).multidot..DELTA.h
where .gamma..sub.air air is the specific weight of air and .gamma.He is
the specific weight of helium.
For example, with the height difference .DELTA.h=10 cm and
.gamma..sub.air =1.293.times.10.sup.-6 (Kg/cm.sup.3)
.gamma.He=0.179.times.10.sup.-6 (Kg/cm.sup.3),
then a pressure difference of
##EQU1##
would be produced. In view of the amount of deformation of the mask 4, it
is desirable that the opening 7b be located at the same height as the
height (h) from the bottom of the chamber 3 to nearly the center of the
mask 4. The allowance of the height difference .DELTA.h should be properly
set in accordance with the type of the mask based on the above equations.
In the thus constituted X-ray exposure apparatus, a predetermined amount of
gaseous helium is supplied to the chamber 3 via the valve 10, pressure
control chamber 8 and pipe 6b from the helium tank 14. At this time, the
differential pressure gauge 9 measures the difference between the pressure
in the pressure control chamber 8 and atmospheric pressure and inputs the
pressure difference signal to the pressure controller 11. The pressure
controller 11 controls the opening of the flow-rate control valve 10 in
accordance with the pressure difference signal. Accordingly, gaseous
helium whose quantity corresponds to the pressure difference is supplied
via the flow-rate control valve 10 to the pressure control chamber 8 from
the helium tank 14. The gaseous helium supplied to the chamber 3 is
properly discharged through the gas discharging portion 7. In this case,
since the height from the bottom of the chamber 3 to the opening 7b is
about the same as the height from the bottom of the chamber 3 to the
center of the mask, the pressure in the chamber 3 becomes approximately
equal to the atmospheric pressure as apparent from the above-given
equation. Accordingly, the X-ray mask 4 will hardly deform, thus ensuring
adequate exposure at a sufficiently high accuracy even in the case of
close exposure with the gap of about 30 .mu.m set between the mask 4 and
the wafer 5.
FIG. 4 shows an embodiment which has a restrictor 6c with an orifice 6a
further provided to the pipe 6b of the embodiment shown in FIG. 3. The
provision of the restrictor 6c having the orifice 6a of a small diameter
as in this embodiment will allow the pressure in the chamber 3 to vary
only slightly with respect to a change in gas pressure in the pressure
control chamber 8. Therefore, a significant pressure change will not occur
on the mask 4, thereby preventing the mask 4 from being deformed
significantly or being damaged.
When the pressure control chamber 8 and the restrictor 6c are provided as
in the above embodiment, it is sufficient that the difference between the
pressure in the pressure control chamber and the atmospheric pressure be
controlled at a relatively coarse accuracy on the order of about 1 mmHg as
mentioned earlier. Therefore, the differential pressure gauge 9 should not
necessarily be a high-precision differential pressure gauge. In other
words, the pressure in the chamber 3 can be controlled at a high accuracy
greater by a factor of several tens over the prior art as long as the
flow-rate control valve 10 and the pressure controller 11 have about the
same precision as those of the prior art.
FIG. 5 shows an embodiment which has both the differential pressure gauge 9
and pressure controller 11 removed from the embodiment in FIG. 4. The
flow-rate control valve 10 is manually controlled in this embodiment. Even
if the pressure in that chamber 8 is manually adjusted, the restrictor 6c
will prevent a large pressure change in the pressure control chamber 8
from being directly transmitted to the chamber 3, and the pressure change
would be suppressed by about a factor of 1000 of the actual pressure
change in the pressure control chamber 8. This embodiment will therefore
sufficiently serve for practical usage, without automatic pressure control
involving the differential pressure gauge 9 and pressure controller 11.
Since the automatic pressure control mechanism is not employed in this
embodiment, the structure of the exposure apparatus will be simplified
considerably.
A different embodiment will now be described referring to FIG. 6.
The same reference numerals as used for the embodiment in FIG. 4 will be
given to the identical components in this embodiment to avoid repeating
their description.
In this embodiment, a pipe 7e extends upward from the side of the bottom
portion of the chamber 3 and then extends horizontally. The shield valve
13 and oxygen analyzer 12 are provided at the horizontal portion of this
pipe 7e. An outer pipe 7f is provided over a lead pipe 7c that extends
downward from the distal end of the pipe 7e. The outer pipe 7f is fitted
over the lead pipe 7c in such a manner that the distance between the
outlet port of the outer pipe 7f and the bottom of the chamber 3, or the
height h from the bottom of the chamber 3 to the outlet port of the outer
pipe 7f, equals the height h from the bottom of the chamber 3 to the
center position of the mask 4, with the downward opening 7b of the lead
pipe 7c located slightly inward from the outlet port of the outer pipe 7f.
A helium retainer 7d for surely preventing air diffusion or penetration
from the gas discharging portion is therefore formed between the outer
pipe 7f and the lead pipe 7c, i.e., around the lead pipe 7c.
With the above structure, gaseous helium coming from the opening 7b rises
since it has lighter specific weight than air, and stays in the helium
retainer 7d. The gaseous helium retained around the opening 7b will
prevent air (oxygen) from entering the chamber 3 through the opening 7b
due to diffusion.
As the pipe 7e is bent upward so that a part of the pipe passage of the gas
discharging portion 7 is located higher than the opening 7b in
consideration of gaseous helium having a smaller density than air, air
having a larger specific weight than the gaseous helium, if some enters
through the opening 7b, would stay somewhere inside the pipe 7e and would
not enter the chamber 3.
As mentioned earlier, the height difference of 1 cm between the outlet port
of the gas discharging portion 7 and the center of the X-ray mask 4
generates a pressure difference of about 1/1000 mmHg. Since the height
from the bottom of the chamber 3 to the center of the X-ray mask 4 is set
nearly equal to the height from the bottom of the chamber 3 to the outlet
port of the gas discharging portion 7 or the outlet port of the outer pipe
7f, the difference between the atmospheric pressure and the pressure in
the chamber 3 will be kept very low. This prevent the mask 4 from being
deformed and damaged.
An embodiment shown in FIG. 7 is the embodiment in FIG. 6 to which a pipe
15 for connecting the helium tank 14 to the helium retainer 7d is added.
In other words, the helium tank 14 and the outer pipe 7f are coupled
together by the pipe 15, leading gaseous helium in the helium tank 14 to
the helium retainer 7d. This structure allows a large amount of gaseous
helium to always stay around the opening 7b to purge around the opening 7b
with the gaseous helium. It is therefore possible to more surely prevent
air (oxygen) from entering the chamber 3 due to diffusion.
An embodiment shown in FIG. 8 has a shield valve 17 provided at the gas
supplying portion 6 in the embodiment in FIG. 6. More specifically, the
shield valve 17 is attached, adjacent to the orifice 6a, to the restrictor
6 provided in the pipe 6b of the gas supplying portion 6, and a bypass
passage 18 including the shield valve 17 is provided in the pipe 6b. With
this structure, to fill inside the chamber 3 with gaseous helium at the
time the exposure apparatus is activated, the shield valve 17 is opened to
supply a large amount of gaseous helium via the bypass passage 18 to the
chamber 3 from the helium tank 14, filling inside the chamber 3 with the
gaseous helium in a short period of time.
A further embodiment will be described below with reference to FIG. 9.
In this embodiment, the differential pressure gauge 9 is directly coupled
to the chamber 3 so as to directly measure the pressure in the chamber 3.
In this case, the differential pressure gauge 9 in use should be a
relatively high-precision type which can measure the difference between
the pressure in the chamber 3 and the atmospheric pressure on the order of
a predetermined pressure difference of 10.sup.-3 mmHg. Further, the helium
tank 14 is coupled via the flow-rate control valve 10 to the chamber 3 by
the pipe 16 which constitutes the gas supplying portion 6.
In this embodiment too, the pipe 7e of the gas discharging portion 7
extends upward from the side of the bottom portion of the chamber 3 and
then extends horizontally. The distal end of the pipe 7e is bent downward
to form the downward opening 7b. In this case, the height from the bottom
of the chamber 3 to the center position of the mask 4 is set equal to the
height from the bottom of the chamber 3 to the opening 7b of the gas
discharging portion 7. Further, the shield valve 13 and oxygen analyzer 12
are attached to the horizontal portion of this pipe 7e.
Although it has been just mentioned that the height h from the bottom of
the chamber to the opening 7b of the gas discharging portion 7 is set
equal to the height from the bottom of the chamber 3 to the center
position of the mask 4 in this embodiment, strictly speaking, the relation
among the pressures at the individual points shown in FIG. 10 is expressed
by the following equations in consideration of the resistance component of
the pipe.
P.sub.f =P.sub.a +.gamma..sub.air .multidot..DELTA.
p.sub.b =P.sub.a +.gamma.He.DELTA.h+.zeta.(.gamma.He/2).upsilon..sup.2
P.sub.b -P.sub.f =-(.gamma..sub.air
-.gamma.He).multidot..DELTA.h+.zeta.(.gamma.He/2
where .zeta.(.gamma.He/2).upsilon..sup.2 is the resistance component of the
pipe.
It is desirable that the height from the bottom of the chamber 3 to the
opening 7b be made variable to cancel the resistance component of the
pipe. FIG. 11 shows an embodiment which has this height changing function.
As shown in FIG. 11, a pressure gauge 21 is attached to the side of the
chamber 3 at the same height from the bottom of the chamber 3 as that
therefrom to the center of the mask 4. This pressure gauge 21 may be a
sensor which is attached to the side of the chamber 3 to detect the amount
of deformation of the measuring mask that has the same characteristic as
the mask 4.
A flexible pipe 22 is connected to the distal end of the gas discharging
portion 7, and the lead pipe 7c having the opening 7b is provided downward
at the distal end of this flexible pipe 22. The distal end of the lead
pipe 7c is coupled to a driving mechanism 23, and moves up and down by the
action of the flexible pipe 22 in accordance with the movement of the
shaft of the driving mechanism 23. The driving mechanism 23 is connected
to a controller 24, which controls the mechanism 23 in accordance with the
pressure detected by the pressure gauge 21 to automatically adjust the
distance between the bottom of the chamber 3 and the opening 7b according
to the detected pressure.
As the height from the bottom of the chamber 3 to the opening 7b has only
to be adjusted at the time of initializing the exposure apparatus, the
height to the opening 7b may be fixed or unchangeable during operation.
While the same reference numerals as used for the previous embodiment are
given to the identical components in the embodiment of FIG. 11 to avoid
repeating their description, those components have the same structures and
perform the same functions as those of the previous embodiment.
Although the foregoing description of the individual embodiments has been
given with reference to the case where the X-ray mask is disposed
vertically, this invention may be adapted for an exposure apparatus where
the X-ray mask 4 is disposed horizontally, as shown in FIG. 12.
More specifically, the X-ray mask 4 is attached horizontally to the bottom
of the chamber 3, and the X-ray window 2 is provided in that top portion
of the chamber 3 which faces this mask 4. The gas supplying portion 7,
pressure control chamber 8, differential pressure gauge 9, flow-rate
control valve 10, pressure controller 11 and helium tank 14 are provided
at one side portion of the chamber 3 (left-hand side in the diagram) with
the same connecting relation as the previous embodiments. The gas
discharging portion 7 is arranged on the opposite side of the chamber 3
(right-hand side in the diagram). The distal end of the lead pipe 7c of
the gas discharging portion 7 is bent downward, and the distance between
the opening 7b at the distal end and a mounting table 25 or the height h
from the mounting table 25 to the opening 7b is set equal to the distal
between the surface of the mask 4 and the mounting table 25 or the height
h from the mounting table 25 to the mask 4.
In this embodiment too, since the height h to the opening 7b is set about
the same as the height to the mask, the pressure in the chamber 3 becomes
approximately equal to the atmospheric pressure as per the above-described
embodiments. Accordingly, the X-ray mask 4 will hardly deform, so that
adequate exposure will be accomplished at a sufficiently high accuracy
even in the case of close exposure with the gap of about 30 .mu.m set
between the mask 4 and the wafer 5.
Although the gas supplying portion 6 and gas discharging portion 7 have
each been explained as a single line in the foregoing description of the
individual embodiments, at least one of the gas supplying portion 6 and
gas discharging portion 7 may branch to a plurality of lines. In this
case, the total area of the cross sections of the divided gas flow
passages should be set in such a way that the total cross-sectional area
of the gas discharging portion 7 is greater than that of the gas supplying
portion 6 to meet the above-described conditions.
The cross-sectional shapes of the gas flow passages of the gas supplying
portion 6 and gas discharging portion 7 are not limited to a circle, but
may take various other forms, such as a rectangle and an ellipsoid.
Although the oxygen analyzer 12 is provided at the gas discharging portion
7, the oxygen analyzer 12 may be disposed inside the chamber 3 so that it
can directly measure the oxygen concentration inside the chamber 3 of
interest.
Additional advantages and modifications will readily occur to those skilled
in the art. Therefore, the invention in its broader aspects is not limited
to the specific details, and representative devices, shown and described
herein. Accordingly, various modifications may be made without departing
from the spirit or scope of the general inventive concept as defined by
the appended claims and their equivalents.
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