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United States Patent | 5,316,804 |
Tomikawa ,   et al. | May 31, 1994 |
There can be provided a novel and useful process for the synthesis of hard boron nitride consisting essentially of single phase cubic boron nitride by a gaseous phase synthesis technique, which comprises adding a F atom-containing gas to the gaseous phase or adding a F atom-containing gas and H atom-containing gas to the gaseous phase, whereby the codeposited hexagonal boron nitride can selectively be etched and hard boron nitride of substantially single phase can finally be synthesized.
Inventors: | Tomikawa; Tadashi (Itami, JP); Fujita; Nobuhiko (Itami, JP); Nakagama; Shyoji (Itami, JP); Nakayama; Akira (Itami, JP) |
Assignee: | Sumitomo Electric Industries, Ltd. (Osaka, JP) |
Appl. No.: | 741615 |
Filed: | August 7, 1991 |
Aug 10, 1990[JP] | 2-210214 | |
May 28, 1991[JP] | 3-123611 |
Current U.S. Class: | 427/569; 204/192.15; 204/298.19; 204/298.21; 427/523; 427/570; 427/573 |
Intern'l Class: | B05D 003/06; C23C 014/34 |
Field of Search: | 427/255.2,255.1,248.1,38,39,596,569,570,523,573 204/192.15,298.19,298.21 |
4412899 | Nov., 1983 | Beale | 204/192. |
4565747 | Jan., 1986 | Nakae et al. | 428/698. |
4683043 | Jul., 1987 | Melton et al. | 204/192. |
4762729 | Aug., 1988 | Hirano et al. | 427/38. |
4973494 | Nov., 1990 | Yamazaki | 427/39. |
5096740 | Mar., 1992 | Nakagama et al. | 427/587. |