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United States Patent | 5,303,594 |
Kurtz ,   et al. | April 19, 1994 |
A pressure transducer employing at least one piezoresistive sensor fabricated from diamond. The diamond piezoresistive sensors are formed on a dielectric layer fabricated from silicon dioxide. The dielectric layer is formed on a silicon carbide force collector. In addition, the silicon carbide force collector may be fabricated from .alpha.-silicon carbide or p-type silicon carbide.
Inventors: | Kurtz; Anthony D. (Teaneck, NJ); Shor; Joseph S. (Flushing, NY) |
Assignee: | Kulite Semiconductor Products, Inc. (Leonia, NJ) |
Appl. No.: | 928840 |
Filed: | August 11, 1992 |
Current U.S. Class: | 73/727; 73/721; 338/4 |
Intern'l Class: | G01L 007/08; G01L 009/06 |
Field of Search: | 257/77,417,418,419 338/4,5,36,42,47 73/727,726,720,721,706,708,754 29/621.1 |
3800264 | Mar., 1974 | Kurtz et al. | |
3930823 | Jan., 1976 | Kurtz et al. | |
4320664 | Mar., 1982 | Rehn et al. | 73/708. |
4768011 | Aug., 1988 | Hattori et al. | 338/5. |
5165283 | Nov., 1992 | Kurtz et al. | 73/727. |
"High Voltage 6H-SiC p-n Junction Diodes", Applied Physics Letters, vol. 59, No. 14 Matus, et al., Sep. 1991 pp. 1770-1772. "Diamond Depositions: Science and Technology", Superconductivity Publications, Nov. 1991 pp. 1, 5-7. "Recent Developments in SiC (USA)", Powell et al. Dec. 1987. "Electrical Characterization of the Oxide-Silicon Carbide Interface by MOS Conductance Techniques", Dept. of Engineering University of Notre Dame, Chaudry, et al. 1986. "Selective Growth of Poly-Diamond Thin Films Using Selective Damaging by Ultrasonic Agitation on a Variety of Substrates", Dept. of Electrical Engineering, Auburn University, Ramesham, et al. 1991. |