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United States Patent | 5,266,823 |
Noji ,   et al. | November 30, 1993 |
According to this present invention, a semiconductor device includes source and drain diffusion layers, and a gate electrode formed on a substrate between the source diffusion layer and the drain diffusion layer. In addition, antioxidant films are respectively formed on the source diffusion layer and the drain diffusion layer. These antioxidant films are used for controlling a diffusion rate of an impurity contained in the source diffusion layer and the drain diffusion layer.
Inventors: | Noji; Hiroyuki (Kawasaki, JP); Kishi; Koichi (Kawasaki, JP); Kohyama; Yusuke (Kawasaki, JP); Sugiura; Soichi (Yamato, JP) |
Assignee: | Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Appl. No.: | 719619 |
Filed: | June 24, 1991 |
Jun 27, 1990[JP] | 2-168931 |
Current U.S. Class: | 257/327; 257/344; 257/369; 257/408; 257/653; 257/E21.337; 257/E21.433; 257/E21.634; 257/E27.064; 257/E29.255 |
Intern'l Class: | H01L 027/01; H01L 029/10; H01L 027/02; H01L 029/06 |
Field of Search: | 357/23.1,23.3,42,54,63,20 257/327,344,346,369,408,607,649,653 |
4623912 | Nov., 1986 | Chang et al. | 357/23. |
4937645 | Jun., 1990 | Ootsuka et al. | 357/23. |