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United States Patent | 5,229,315 |
Jun ,   et al. | July 20, 1993 |
The present invention relates to a method for forming an isolated film on a semiconductor device in the shape of a cylinder to shorten the heat treatment process and to prevent a micro-loading effect of filling of a field-isolated oxide film. The method comprises the step of forming a deep, narrow groove, then filling up the groove with an oxide film, and then oxidizing a polysilicon layer encircled by the groove to form an isolated film in the shape of a cylinder.
Inventors: | Jun; Young K. (Seoul, KR); Kim; Young S. (Seoul, KR) |
Assignee: | Gold Star Electron Co., Ltd. (KR) |
Appl. No.: | 822020 |
Filed: | January 16, 1992 |
Jan 16, 1991[KR] | 640/1991 |
Current U.S. Class: | 438/426; 148/DIG.50; 257/E21.547; 257/E21.549; 257/E21.551; 438/434 |
Intern'l Class: | H01L 021/76 |
Field of Search: | 437/67,72,63,64,968 148/DIG. 50 257/374,395-399,510,513,519,520,647,648 |
4551911 | Nov., 1985 | Sasaki et al. | 437/67. |
4633290 | Dec., 1986 | Poppert et al. | 257/374. |
4704786 | Nov., 1987 | Kub | 437/225. |
4717682 | Jan., 1988 | Taka et al. | 437/233. |
5061652 | Oct., 1991 | Bendernagel et al. | 437/81. |
5073813 | Dec., 1991 | Morita et al. | 357/49. |
5089435 | Feb., 1992 | Akiyama | 437/44. |
5094966 | Mar., 1992 | Yamazaki | 437/40. |
Foreign Patent Documents | |||
0001243 | Jan., 1987 | JP | 437/67. |
0016751 | Jan., 1988 | JP. |