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United States Patent | 5,204,283 |
Kitagawa ,   et al. | April 20, 1993 |
A high-purity II-VI semiconducting compound can be produced by initially preparing a substrate of a II-VI semiconducting compound by a chemical transport method with a halogen as transport medium and then epitaxially growing a layer of a II-VI compound on this substrate.
Inventors: | Kitagawa; Masahiko (Nara, JP); Tomomura; Yoshitaka (Nara, JP) |
Assignee: | Sharp Kabushiki Kaisha (Osaka, JP) |
Appl. No.: | 750432 |
Filed: | August 20, 1991 |
Dec 12, 1986[JP] | 61-297025 |
Current U.S. Class: | 438/509; 117/91; 117/956; 148/DIG.64; 257/E21.462; 438/22 |
Intern'l Class: | H01L 021/205 |
Field of Search: | 156/606,610,612,DIG. 72,DIG. 77 148/DIG. 64 437/105 |
4509997 | Apr., 1985 | Cockaybe et al. | 156/612. |
4735910 | Apr., 1988 | Mitsuya et al. | 437/105. |
Foreign Patent Documents | |||
47-12058 | Apr., 1972 | JP | 156/610. |
59-146999 | Aug., 1984 | JP | 437/105. |
61-297686 | Nov., 1986 | JP | 156/610. |
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