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United States Patent | 5,162,263 |
Kunishima ,   et al. | November 10, 1992 |
A semiconductor device comprises a semiconductor substrate of a first conductivity type. An insulative film and metal films are sequentially formed on the main top surface of the semiconductor substrate. Impurity diffusion layers of a second conductivity type are selectively formed on the main top surface of the semiconductor substrate. The semiconductor device further comprises metal compound layers consisting of constituting elements of the semiconductor substrate and a metal element. The metal compound layers are formed in the impurity diffusion layers in such a manner that they do not contact the insulative film, and the metal compound layers on the main back surface side of the semiconductor substrate have faces formed in parallel to the top surface of the semiconductor substrate. The method also includes cooling the top of the substrate to form a temperature gradient that results in increased dopant concentration at the bottom of a silicide layer.
Inventors: | Kunishima; Iwao (Tokyo, JP); Aoyama; Tomonori (Yokohama, JP); Suguro; Kyoichi (Yokohama, JP) |
Assignee: | Kabushiki Kaisha Toshiba (Kawasaki, JP) |
Appl. No.: | 755820 |
Filed: | September 6, 1991 |
Nov 27, 1989[JP] | 1-307322 |
Current U.S. Class: | 438/535; 148/DIG.19; 257/E21.151; 257/E21.375; 257/E21.433; 257/E21.438; 257/E29.112; 257/E29.143; 257/E29.146; 257/E29.156; 438/301; 438/369; 438/533 |
Intern'l Class: | H01L 021/283; H01L 021/22 |
Field of Search: | 437/200,192,160,162,248,41,14 S,22,25 148/DIG. 19,DIG. 147 |
4551908 | Nov., 1985 | Nagasawa et al. | 148/DIG. |
4558507 | Dec., 1985 | Okabayashi et al. | 148/DIG. |
4622735 | Nov., 1986 | Shibata | 148/DIG. |
4774204 | Sep., 1988 | Havemann | 437/192. |
4788160 | Nov., 1988 | Havemann et al. | 437/192. |
4999320 | Mar., 1991 | Douglas | 437/225. |
Foreign Patent Documents | |||
1-117319 | May., 1989 | JP | 437/14. |