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United States Patent | 5,115,295 |
Hisa | May 19, 1992 |
A photodetector device of a rear surface incident type includes a semi-insulating substrate transparent to light incident from the rear surface, a plurality of second conductivity type semiconductor regions disposed on the substrate in a first conductivity type semiconductor layer, a conductive light absorption layer disposed on at least one of the second conductivity type semiconductor regions, metal electrodes having a high reflectance of the incident light disposed on the light absorption layer and the second conductivity type semiconductor regions, and protection layers disposed on the first conductivity type semiconductor layer.
Inventors: | Hisa; Yoshihiro (Itami, JP) |
Assignee: | Mitsubishi Denki Kabushiki Kaisha (JP) |
Appl. No.: | 600180 |
Filed: | October 19, 1990 |
Oct 31, 1989[JP] | 1-285221 | |
Oct 31, 1989[JP] | 1-285221 |
Current U.S. Class: | 257/188; 257/432; 257/442; 257/443; 257/E27.152; 257/E27.161 |
Intern'l Class: | H01L 027/14; H01L 031/00; H01L 029/06; H01L 029/161 |
Field of Search: | 357/30 R,30 B,30 L,30 D,20,30,32,55,61 |
4275407 | Jun., 1981 | Lorenze | 357/30. |
4442310 | Apr., 1984 | Carlson et al. | 136/256. |
4596930 | Jun., 1986 | Steil et al. | 250/332. |
4951106 | Aug., 1990 | Blouke | 357/30. |
4972244 | Nov., 1990 | Buffet et al. | 357/30. |
4999694 | Mar., 1991 | Austin et al. | 357/30. |
Foreign Patent Documents | |||
0083986 | Jul., 1983 | EP. | |
A304335 | Feb., 1989 | EP | 357/30. |
61-152065 | Jul., 1986 | JP | 357/30. |
62-36858 | Feb., 1987 | JP | 357/30. |
62-104163 | May., 1987 | JP | 357/30. |
63-133580 | Jun., 1988 | JP | 357/30. |
63-273365 | Nov., 1988 | JP | 357/30. |
29180 | Jan., 1990 | JP | 357/30. |
8707083 | Nov., 1987 | WO. |