Back to EveryPatent.com
United States Patent | 5,065,205 |
Biefeld ,   et al. | November 12, 1991 |
A high gain photoconductive device for 8 to 12 .mu.m wavelength radiation including an active semiconductor region extending from a substrate to an exposed face, the region comprising a strained-layer superlattice of alternating layers of two different InAs.sub.1-x Sb.sub.x compounds having x>0.75. A pair of spaced electrodes are provided on the exposed face, and changes in 8 to 12 .mu.m radiation on the exposed face cause a large photoconductive gain between the spaced electrodes.
Inventors: | Biefeld; Robert M. (Albuquerque, NM); Dawson; L. Ralph (Albuquerque, NM); Fritz; Ian J. (Albuquerque, NM); Kurtz; Steven R. (Albuquerque, NM); Zipperian; Thomas E. (Albuquerque, NM) |
Assignee: | The United States of America as represented by the United States (Washington, DC) |
Appl. No.: | 350814 |
Filed: | May 12, 1989 |
Current U.S. Class: | 257/18; 257/E31.033; 257/E31.093 |
Intern'l Class: | H01L 029/205; H01L 027/14; H01L 031/06 |
Field of Search: | 357/16,30,4 |
4607272 | Aug., 1986 | Osbourn | 357/30. |
Foreign Patent Documents | |||
60-247979 | Dec., 1985 | JP | 357/4. |
61-27686 | Feb., 1986 | JP | 357/4. |
G. Osbourn, "InAsSb Strained-Layer Superlattices for Long Wavelength Detector Applications", J. Vac. Sci. Technology B, vol. 2, No. 2, Apr.-Jun. 1984, pp. 176-178. S. Kurtz et al., "Extended Infrared Response of InAsSb Strained-Layer Superlattices", Applied Physics Letters, vol. 52, No. 10, Mar. 7, 1988, pp. 831-833. S. Kurtz et al., "Demonstration of an InAsSb Strained-Layer Superlattice Photodiode", Applied Physics Letters, vol. 52, No. 19, May 9, 1988, pp. 1581-1583. G. Dohler, "Doping Superlattices (n-i-p-i Crystals)", IEEE Journal of Quantum Electronics, vol. QE-22, No. 9, 09/86, pp. 1682-1694. R. Biefeld et al., "Strain Relief in Compositionally Graded InAsx-Sb1-x Buffer Layers and InAsxSb1-x/InSb Strained-Layer Superlattices Grown by MOCVD", Jour. of Crystal Growth, vol. 91, 1988, pp. 515-516. Rittner, Photoconductivity Conference, Wiley, New York, 1956, pp. 233-237. P. Kruse, Semiconductors and Semimetals, vol. 5, Academic Press, New York, 1970. S. Kurtz et al., "InAsSb Strained-Layer Superlattices: A New Class of Far Infrared Materials", SPIE, vol. 930, Infrared Detectors and Arrays, 1988, pp. 101-113. |