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United States Patent | 5,035,751 |
Nagashima, ;, , , --> Nagashima ,   et al. | July 30, 1991 |
An improvement in a method for cleaning a CVD deposition chamber in a semiconductor wafer processing apparatus is described. The improvement comprises the treatment of fluorine residues in the CVD deposition chamber, left from a prior fluorine plasma cleaning step, by contacting such fluorine residues with one or more reducing gases which will react with the fluorine residues to form one or more gaseous or solid reaction products or a mixture of same.
Inventors: | Nagashima; Makoto (Machida, JP); Kobayashi; Naoaki (Sakura, JP); Wong; Jerry (Fremont, CA) |
Assignee: | Applied Materials, Inc. (Santa Clara, CA) |
Appl. No.: | 411433 |
Filed: | September 22, 1989 |
Intern'l Class: | B44C 001/22 |
Field of Search: | 134/1,26,3,22.1,30,36 156/345,643 |
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