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United States Patent | 5,021,840 |
Morris | June 4, 1991 |
Disclosed is a Schottky diode having a platinum silicide Schottky anode layer (25) formed in electrical contact with an underlying silicon semiconductor layer (14). A sidewall oxide (36) is formed around the periphery of the platinum silicide area (25) to prevent etching processes from exposing a portion of the underlying silicon semiconductor layer (14). A titanium tungsten diffusion barrier layer (26) and an aluminum composition layer (28) are formed thereover to provide electrical contact to the Schottky diode.
Inventors: | Morris; Francis J. (Plano, TX) |
Assignee: | Texas Instruments Incorporated (Dallas, TX) |
Appl. No.: | 449066 |
Filed: | December 14, 1989 |
Current U.S. Class: | 257/476; 257/486; 257/603; 257/E23.019; 257/E29.338 |
Intern'l Class: | H01L 029/48; 30 C; 30 P; 15 P; 15 M |
Field of Search: | 357/13,13 R,13 O,13 V,13 Z,13 LM,13 PT,54,54 R,54 N,15,71 S,71 R,65,68,49,55 |
3745428 | Jul., 1973 | Misawa et al. | 357/54. |
3808470 | Apr., 1974 | Kniepkamp | 357/15. |
4272561 | Jun., 1981 | Rothman et al. | 357/15. |
4358891 | Nov., 1982 | Roesner | 357/15. |
4503600 | Mar., 1985 | Nii et al. | 357/15. |
4541000 | Sep., 1985 | Colquhoun et al. | 357/15. |
4712152 | Dec., 1987 | Iio | 357/13. |
4752813 | Jun., 1988 | Bhatia et al. | 357/15. |
4775643 | Oct., 1988 | Wetteroth | 357/13. |
4825278 | Apr., 1989 | Hillenius et al. | 357/54. |
Foreign Patent Documents | |||
0152615 | Aug., 1985 | EP | 357/15. |
52-55380 | May., 1977 | JP | 357/54. |
Briska et al., "Method of Producing Schottky Contacts", IBM Technical Disclosure Bulletin, vol. 22, No. 11, Apr. 1980, p. 4964. Ross, "Stable SBD for Nitride-Passivated Processes via Oxide Step Reduction", IBM Technical Disclosure Bulletin, vol. 22, No. 4, Sep. '79, pp. 1403-1404. Murarka, "Refractory Silicides for Integrated Circuits", J. Vac. Sci. Tecnol., 17 (4), Jul./Aug. 1980, pp. 776-792. |